- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369760 > LH28F800BGN-TL12 x16 Flash EEPROM PDF資料下載
參數(shù)資料
| 型號： | LH28F800BGN-TL12 |
| 英文描述： | x16 Flash EEPROM |
| 中文描述： | x16閃存EEPROM |
| 文件頁數(shù)： | 19/56頁 |
| 文件大?。?/td> | 373K |
| 代理商： | LH28F800BGN-TL12 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁當前第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁
- 19 -
4.8
Word/byte write is executed by a two-cycle
command sequence. Word/Byte Write setup
(standard 40H or alternate 10H) is written, followed
by a second write that specifies the address and
data (latched on the rising edge of WE#). The
WSM then takes over, controlling the word/byte
write and write verify algorithms internally. After the
word/byte write sequence is written, the device
automatically outputs status register data when
read (see
Fig. 5
). The CPU can detect the
completion of the word/byte write event by
analyzing the STS pin or status register bit SR.7.
Word/Byte Write Command
When word/byte write is complete, status register
bit SR.4 should be checked. If word/byte write error
is detected, the status register should be cleared.
The internal WSM verify only detects errors for "1"s
that do not successfully write to "0"s. The CUI
remains in read status register mode until it
receives another command.
Reliable word/byte writes can only occur when V
CC
=
V
CC1/2
and V
PP =
V
PPH1
. In the absence of this
high voltage, memory contents are protected
against word/byte writes. If word/byte write is
attempted while V
PP
≤
V
PPLK
, status register bits
SR.3 and SR.4 will be set to "1". Successful
word/byte write requires that the corresponding
block lock-bit be cleared or, if set, that WP# = V
IH
.
If word/byte write is attempted when the
corresponding block lock-bit is set and WP# = V
IL
,
SR.1 and SR.4 will be set to "1". Word/byte write
operations with V
IL
< WP# < V
IH
produce spurious
results and should not be attempted.
4.9
Multi word/byte write is executed by at least four-
cycle or up to 35-cycle command sequence. Up to
32 bytes in x8 mode (16 words in x16 mode) can
be loaded into the buffer and written to the flash
array. First, multi word/byte write setup (E8H) is
written with the write address. At this point, the
Multi Word/Byte Write Command
device automatically outputs extended status
register data (XSR) when read (see
Fig. 6
and
Fig. 7
). If extended status register bit XSR.7 is 0,
no Multi Word/Byte Write command is available and
multi word/byte write setup which just has been
written is ignored. To retry, continue monitoring
XSR.7 by writing multi word/byte write setup with
write address until XSR.7 transitions to "1". When
XSR.7 transitions to "1", the device is ready for
loading the data to the buffer. A word/byte count
(N)–1 is written with write address. After writing a
word/byte count (N)–1, the device automatically
turns back to output status register data. The
word/byte count (N)–1 must be less than or equal
to 1FH in x8 mode (0FH in x16 mode). On the next
write, device start address is written with buffer
data. Subsequent writes provide additional device
address and data, depending on the count. All
subsequent address must lie within the start
address plus the count. After the final buffer data is
written, write confirm (D0H) must be written. This
initiates WSM to begin copying the buffer data to
the flash array. An invalid Multi Word/Byte Write
command sequence will result in both status
register bits SR.4 and SR.5 being set to "1". For
additional multi word/byte write, write another multi
word/byte write setup and check XSR.7. The Multi
Word/Byte Write command can be queued while
WSM is busy as long as XSR.7 indicates "1",
because LH28F160S5-L/S5H-L have two buffers. If
an error occurs while writing, the device will stop
writing and flush next Multi Word/Byte Write
command loaded in Multi Word/Byte Write
command. Status register bit SR.4 will be set to "1".
No Multi Word/Byte Write command is available if
either SR.4 or SR.5 is set to "1". SR.4 and SR.5
should be cleared before issuing Multi Word/Byte
Write command. If a Multi Word/Byte Write
command is attempted past an erase block
boundary, the device will write the data to flash
array up to an erase block boundary and then stop
writing. Status register bits SR.4 and SR.5 will be
set to "1".
LH28F160S5-L/S5H-L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F800BGN-TL85 | x16 Flash EEPROM |
| LH28F800BVHE-BV85 | x8/x16 Flash EEPROM |
| LH28F800SGB-L10 | x16 Flash EEPROM |
| LH28F800SGB-L100 | x16 Flash EEPROM |
| LH28F800SGB-L70 | x16 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F800BGN-TL85 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
| LH28F800BGRBL12 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGR-BL12 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGRBL85 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGR-BL85 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。