參數(shù)資料
型號: LH28F800BGN-BL85
英文描述: x16 Flash EEPROM
中文描述: x16閃存EEPROM
文件頁數(shù): 25/56頁
文件大?。?/td> 373K
代理商: LH28F800BGN-BL85
- 25 -
LH28F160S5-L/S5H-L
Full Chip Erase
Complete
Start
Write 70H
Read
Status Register
0
0
SR.7 =
1
SR.7 =
1
Write 30H
Write D0H
Read
Status Register
Full Status
Check if Desired
SR.3 =
FULL STATUS CHECK PROCEDURE
Read Status Register
Data (See Above)
V
PP
Range Error
1
0
SR.4, 5 =
Command Sequence
Error
1
0
BUS
OPERATION
COMMAND
COMMENTS
Standby
Check SR.5
1 = Full Chip Erase Error
SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear
Status Register command in cases where multiple blocks
are erased before full status is checked.
If error is detected, clear the status register before attempting
retry or other error recovery.
Full Chip Erase
Successful
Full status check can be done after each full chip erase.
Write FFH after the last full chip erase operation to place
device in read array mode.
SR.5 =
Full Chip Erase Error
1
0
Standby
Check SR.3
1 = V
PP
Error Detect
Standby
Check SR.4, 5
Both 1 = Command Sequence Error
BUS
OPERATION
Write
Read
Standby
Standby
COMMAND
Read Status
Register
COMMENTS
Data = 70H
Addr = X
Status Register Data
Status Register Data
Check SR.7
1 = WSM Ready
0 = WSM Busy
Check SR.7
1 = WSM Ready
0 = WSM Busy
Full Chip
Erase Confirm
Full Chip
Erase Setup
Write
Write
Read
Data = D0H
Addr = X
Data = 30H
Addr = X
Fig. 4 Automated Full Chip Erase Flowchart
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