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參數(shù)資料
| 型號： | LH28F800BGB-TL85 |
| 廠商： | Sharp Corporation |
| 英文描述： | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| 中文描述： | 8 M位（512 KB的× 16）SmartVoltage閃存 |
| 文件頁數(shù)： | 7/38頁 |
| 文件大?。?/td> | 328K |
| 代理商： | LH28F800BGB-TL85 |
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8M (512K × 16, 1M × 8) Flash Memory
LH28F800SU
7
Figure 4. LH28F800SU Memory Map
(Byte-Wide Mode)
The LH28F800SU incorporates an Automatic Power
Saving (APS) feature which substantially reduces the
active current when the device is in static mode of
operation (addresses not switching).
In APS mode, the typical I
CC
current is 2 mA at 5.0 V
(1 mA at 3.3 V).
A Deep Power-Down mode of operation is invoked
when the RP
(called PWD on the LH28F008SA) pin
transitions low, any current operation is aborted and the
device is put into the deep power-down mode. This mode
brings the device power consumption to less than 5 μA,
typically, and provides additional write protection by
acting as a device reset pin during power transitions.
When the power is turned on, RP
pin turned to low or-
der to return the device to default configuration. When
the 3/5
pin is switched, or when the power transition is
occurred, or at the power on/off, RP
is required to stay
low in order to protect data from noise. A recovery time
of 400 ns (V
CC
= 5.0 V ± 0.5 V) is required from RP
switching high until outputs are again valid. In the Deep
Power-Down state, the WSM is reset (any current
operation will abort) and the CSR, GSR and BSR regis-
ters are cleared.
A CMOS Standby mode of operation is enabled when
either CE
0
or CE
1
transitions high and RP
stays
high with all input control pins at CMOS levels. In this
mode, the device typically draws an I
CC
standby cur-
rent of 10 μA.
FFFFFH
15
F0000H
EFFFFH
14
E0000H
DFFFFH
13
D0000H
CFFFFH
12
C0000H
BFFFFH
11
B0000H
AFFFFH
10
A0000H
9FFFFH
9
90000H
8FFFFH
8
80000H
7FFFFH
7
70000H
6FFFFH
6
60000H
5FFFFH
5
50000H
4FFFFH
4
40000H
3FFFFH
3
30000H
2FFFFH
2
20000H
1FFFFH
1
10000H
0FFFFH
0
00000H
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28F800SUR-3
MEMORY MAP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F800BGE-BL12 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGE-TL12 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGE-TL85 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGHR-TL12 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGHR-TL85 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F800BGEBL12 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGE-BL12 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGEBL85 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGE-BL85 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGETL12 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
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