參數(shù)資料
型號: LH28F800BGB-TL12
廠商: Sharp Corporation
英文描述: 8 M-bit (512 kB x 16) SmartVoltage Flash Memories
中文描述: 8 M位(512 KB的× 16)SmartVoltage閃存
文件頁數(shù): 17/38頁
文件大?。?/td> 328K
代理商: LH28F800BGB-TL12
8M (512K × 16, 1M × 8) Flash Memory
LH28F800SU
17
Timing Nomenclature
All 3.3 V systems are measured from where signals cross 1.5 V. For 5.0 V systems use the standard JEDEC cross
point definitions. Each timing parameter consists of 5 characters. Some common examples are defined below:
t
CE
t
ELQV
t
OE
t
GLQV
t
ACC
t
AVQV
time (t) from address (A) valid (V) to the outputs (Q) becoming valid (V)
t
AS
t
AVWH
t
DH
t
WHDX
time (t) from CE
(E) going low (L) to the outputs (Q) becoming valid (V)
time (t) from OE
(G) going low (L) to the outputs (Q) becoming valid (V)
time (t) from address (A) valid (V) to WE
(W) going high (H)
time (t) from WE
(W) going high (H) to when the data (D) can become undefined (X)
PIN CHARACTERS
PIN STATES
A
Address Inputs
H
High
D
Data Inputs
L
Low
Q
Data Outputs
V
Valid
E
CE
(Chip Enable)
X
Driven, but not necessarily valid
G
OE
(Output Enable)
Z
High Impedance
W
WE (Write Enable)
P
RP
(Deep Power-Down Pin)
R
RY
/BY
(Ready/Busy)
V
Any Voltage Level
Y
3/5
Pin
5 V
V
CC
at 4.5 V Min.
3 V
V
CC
at 3.0 V Min.
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