參數(shù)資料
型號： LH28F800BGB-BL85
廠商： Sharp Corporation
英文描述： 8 M-bit (512 kB x 16) SmartVoltage Flash Memories
中文描述： 8 M位（512 KB的× 16）SmartVoltage閃存
文件頁數(shù)： 6/38頁
文件大?。?/td> 328K
代理商： LH28F800BGB-BL85
LH28F800SU
8M (512K × 16, 1M × 8) Flash Memory
6
The LH28F800SU will be available in a 56-pin,
1.2 mm thick × 14 mm × 20 mm TSOP (Type I) pack-
age. This form factor and pinout allow for very high board
layout densities.
A Command User Interface (CUI) serves as the sys-
tem interface between the microprocessor or
microcontroller and the internal memory operation.
Internal Algorithm Automation allows Byte/Word
Writes and Block Erase operations to be executed
using a Two-Write command sequence to the CUI in
the same way as the LH28F008SA 8M Flash memory.
A Superset of commands have been added to the
basic LH28F008SA command-set to achieve higher
write performance and provide additional capabilities.
These new commands and features include:
Page Buffer Writes to Flash
Command Queuing Capability
Automatic Data Writes During Erase
Software Locking of Memory Blocks
Two-Byte Successive Writes in 8-bit Systems
Erase All Unlocked Blocks
Writing of memory data is performed in either byte or
word increments typically within 8 μs, a 25% improve-
ment over the LH28F008SA. A Block Erase operation
erases one of the 16 blocks in typically 0.7 seconds,
independent of the other blocks, which is about 55%
improvement over the LH28F008SA.
The LH28F800SU incorporates two Page Buffers of
256 Bytes (128 Words) each to allow page data writes.
This feature can improve a system write performance
over previous flash memory devices.
All operations are started by a sequence of Write
commands to the device. Three Status Registers (de-
scribed in detail later) and a RY
/BY
output pin provide
information on the progress of the requested operation.
While the LH28F008SA requires an operation to com-
plete before the next operation can be requested, the
LH28F800SU allows queuing of the next operation while
the memory executes the current operation. This elimi-
nates system overhead when writing several bytes in a
row to the array or erasing several blocks at the same
time. The LH28F800SU can also perform write opera-
tions to one block of memory while performing erase of
another block.
The LH28F800SU provides user-selectable block
locking to protect code or data such as Device Drivers,
PCMCIA card information, ROM-Executable O/S or Ap-
plication Code. Each block has an associated non-
volatile lock-bit which determines the lock status of the
block. In addition, the LH28F800SU has a master Write
Protect pin (WP
) which prevents any modification to
memory blocks whose lock-bits are set.
The LH28F800SU contains three types of Status
Registers to accomplish various functions:
A Compatible Status Register (CSR) which is
100% compatible with the LH28F008SA Flash
memory’s Status Register. This register, when used
alone, provides a straightforward upgrade capabil-
ity to the LH28F800SU from a LH28F008SA
based design.
A Global Status Register (GSR) which informs the
system of command Queue status. Page Buffer sta-
tus, and overall Write State Machine (WSM) status.
16 Block Status Register (BSRs) which provide
block-specific status information such as the block
lock-bit status.
The GSR and BSR memory maps for Byte-Wide and
Word-Wide modes are shown in Figures 5 and 6.
The LH28F800SU incorporates an open drain
RY
/BY
output pin. This feature allows the user to OR-
tie many RY
/BY
pins together in a multiple memory con-
figuration such as a Resident Flash Array.
The LH28F800SU also incorporates a dual chip-en-
able function with two input pins. CE
0
and CE
1
. These
pins have exactly the same functionality as the regular
chip-enable pin CE
on the LH28F008SA. For minimum
chip designs, CE
1
may be tied to ground and use CE
0
as the chip enable input. The LH28F800SU uses the
logical combination of these two signals to enable or
disable the entire chip. Both CE
0
and CE
1
must be ac-
tive low to enable the device and if either one
becomes inactive, the chip will be disabled. This fea-
ture, along with the open drain RY
/BY
pin, allows the
system designer to reduce the number of control pins
used in a large array of 8M devices.
The BY
TE
pin allows either x8 or x16 read/writes to
the LH28F800SU. BY
TE
at logic low selects 8-bit mode
with address A
0
selecting between low byte and high
byte. On the other hand, BY
TE
at logic high enables
16-bit operation with address A
1
becoming the lowest
order address and address A
0
is not used (don’t care).
A block diagram is shown in Figure 3.
The LH28F800SU is specified for a maximum
access time of each version, as follows:
OPERATING
TEMPERATURE
V
CC
SUPPLY
MAX. ACCESS
(T
ACC
)
0 - 70°C
4.75 - 5.25 V
70 ns
0 - 70°C
4.5 - 5.5 V
80 ns
0 - 70°C
3.0 - 3.6 V
120 ns
0 - 70°C
2.7 - 3.6 V
160 ns
相關(guān)PDF資料
PDF描述
LH28F800BVB-TTL90 Flash Memory 8M (1M 】 8/512K 】 16)
LH28F800BGBTL12 Aluminum Polymer Radial Lead Capacitor; Capacitance: 1200uF; Voltage: 4V; Case Size: 8x9 mm; Packaging: Bulk
LH28F800BGBTL85 Aluminum Polymer Radial Lead Capacitor; Capacitance: 1800uF; Voltage: 4V; Case Size: 8x12 mm; Packaging: Bulk
LH28F800BGHRTL12 RES CURRENT SENSE .025 OHM 1W 1%
LH28F800BGHRTL85 RES CURRENT SENSE .025 OHM 1W 1%
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F800BGB-L 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories
LH28F800BGBTL12 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories
LH28F800BGB-TL12 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories
LH28F800BGBTL85 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories
LH28F800BGB-TL85 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories
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