參數(shù)資料
型號: LH28F800BG-L
廠商: Sharp Corporation
英文描述: 8 M-bit (512 kB x 16) SmartVoltage Flash Memories
中文描述: 8 M位(512 KB的× 16)SmartVoltage閃存
文件頁數(shù): 29/38頁
文件大?。?/td> 328K
代理商: LH28F800BG-L
8M (512K × 16, 1M × 8) Flash Memory
LH28F800SU
29
AC Characteristics for WE
- Controlled Command Write Operations
1
T
A
= 0°C to +70°C
SYMBOL
PARAMETER
TYP.
V
CC
= 3.3 ± 0.3 V
NOTE
MIN.
MAX.
UNITS
t
AVAV
Write Cycle Time
120
ns
t
VPWH
V
PP
Setup to WE Going High
100
ns
3
t
PHEL
RP
Setup to CE
Going Low
480
ns
t
ELWL
CE
Setup to WE Going Low
10
ns
t
AVWH
Address Setup to WE Going High
75
ns
2, 6
t
DVWH
Data Setup to WE Going High
75
ns
2, 6
t
WLWH
WE Pulse Width
75
ns
t
WHDX
Data Hold from WE High
10
ns
2
t
WHAX
Address Hold from WE High
10
ns
2
t
WHEH
CE
Hold from WE High
10
ns
t
WHWL
WE Pulse Width High
45
ns
t
GHWL
Read Recovery before Write
0
ns
t
WHRL
WE High to RY
/BY
Going Low
100
ns
t
RHPL
RP
Hold from Valid Status Register
(CSR, GSR, BSR) Data and RY
/BY
High
0
ns
3
t
PHWL
RP
High Recovery to WE Going Low
1
μs
t
WHGL
Write Recovery before Read
95
ns
t
QVVL
V
PP
Hold from Valid Status Register
(CSR, GSR, BSR) Data and RY
/BY
High
0
μs
t
WHQV1
t
WHQV2
Duration of Word/Byte Write Operation
12
5
μs
4, 5
Duration of Block Erase Operation
0.3
s
4
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