參數資料
型號: LH28F400SUN-NC60
廠商: Sharp Corporation
英文描述: 4M (512K 】 8, 256K 】 16) Flash Memory
中文描述: 4分(為512k】8,256K】16)快閃記憶體
文件頁數: 23/35頁
文件大小: 294K
代理商: LH28F400SUN-NC60
4M (512K × 8, 256K × 16) Flash Memory
LH28F400SU-NC
23
AC Characteristics - Read Only Operations
1
V
CC
= 5.0 V ± 0.5 V, T
A
= 0°C to +70°C
SYMBOL
PARAMETER
V
CC
= 5.0 V ± 0.25 V
V
CC
= 5.0 V ± 0.5 V
UNITS
NOTE
MIN.
MAX.
MIN.
MAX.
t
AVAV
Read Cycle Time
60
70
ns
t
AVGL
Address Setup to OE
Going Low
0
0
ns
3
t
AVQV
Address to Output Delay
60
70
ns
t
ELQV
CE
to Output Delay
60
70
ns
2
t
PHQV
RP
High to Output Delay
400
430
ns
t
GLQV
OE
to Output Delay
30
35
ns
2
t
ELQX
CE
to Output in Low Z
0
0
ns
3
t
EHQZ
CE
to Output in High Z
25
30
ns
3
t
GLQX
OE
to Output in Low Z
0
0
ns
3
t
GHQZ
OE
to Output in High Z
25
30
ns
3
t
OH
Output Hold from Address, CE
or
OE
change, whichever occurs first
0
0
ns
3
t
FLGZ
BYTE Low to Output in High Z
40
45
ns
3
t
FLEL
t
FHEL
BYTE High or Low to CE
Low
15
15
ns
3
NOTES:
1. See AC Input/Output Reference Waveforms for timing measurements.
2. OE
may be delayed up to t
ELQV
- t
GLQV
after the falling edge of CE
without impact on t
ELQV
.
3. Sampled, not 100% tested.
4. Only to RP
, V
IH
(MIN.) = 2.4 V.
相關PDF資料
PDF描述
LH28F400SUN-NC80 4M (512K 】 8, 256K 】 16) Flash Memory
LH28F400SUT-NC60 4M (512K 】 8, 256K 】 16) Flash Memory
LH28F400SUT-NC80 4M (512K 】 8, 256K 】 16) Flash Memory
LH28F400BG-TL85 4M-BIT (256KB x16) SmartVoltage Flash MEMORY
LH28F400SU-NC 4M (512K 】 8, 256K 】 16) Flash Memory
相關代理商/技術參數
參數描述
LH28F400SUN-NC80 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory
LH28F400SUT-LC12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
LH28F400SUT-LC15 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
LH28F400SUT-NC60 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory
LH28F400SUT-NC80 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory