參數(shù)資料
型號(hào)： LH28F400SUN-LC15
英文描述： x8/x16 Flash EEPROM
中文描述： x8/x16閃存EEPROM
文件頁(yè)數(shù)： 49/56頁(yè)
文件大?。?/td> 373K
代理商： LH28F400SUN-LC15
LH28F160S5-L/S5H-L
- 49 -
6.2.7 RESET OPERATIONS
RP# (P)
V
IL
(A) Reset During Read Array Mode
(B) Reset During Block Erase, Full Chip Erase, (Multi) Word/Byte Write
or Block Lock-Bit Configuration
V
IH
High Z
V
IH
High Z
V
OL
V
IL
V
OL
STS (R)
STS (R)
RP# (P)
V
IL
V
IH
RP# (P)
V
IL
V
CC
5 V
(C) V
CC
Power Up Timing
t
PLPH
t
PLRH
t
PLPH
t
5VPH
Fig. 19 AC Waveform for Reset Operation
Reset AC Specifications
(NOTE 1)
SYMBOL
PARAMETER
NOTE
V
CC
= 5.0±0.5 V
MIN.
UNIT
MAX.
t
PLPH
RP# Pulse Low Time (If RP# is tied to V
CC
,
this specification is not applicable)
RP# Low to Reset during Block Erase, Full Chip Erase,
(Multi) Word/Byte Write or Block Lock-Bit Configuration
V
CC
4.5 V to RP# High
NOTES :
1.
These specifications are valid for all product versions
(packages and speeds).
2.
If RP# is asserted while a block erase, full chip erase,
(multi) word/byte write or block lock-bit configuration
operation is not executing, the reset will complete within
100 ns.
100
ns
t
PLRH
2, 3
13.1
μs
t
5VPH
4
100
ns
3.
A reset time, t
PHQV
, is required from the latter of STS
going High Z or RP# going high until outputs are valid.
When the device power-up, holding RP#-low minimum
100 ns is required after V
CC
has been in predefined
range and also has been in stable there.
4.
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F400SUN-NC60 制造商:SHARP 制造商全稱(chēng):Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory
LH28F400SUN-NC80 制造商:SHARP 制造商全稱(chēng):Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory
LH28F400SUT-LC12 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x8/x16 Flash EEPROM
LH28F400SUT-LC15 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x8/x16 Flash EEPROM
LH28F400SUT-NC60 制造商:SHARP 制造商全稱(chēng):Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory
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