參數(shù)資料
型號(hào): LH28F400SUHN-NC80
廠商: Sharp Corporation
英文描述: 4M Flash Memory
中文描述: 4分快閃記憶體
文件頁(yè)數(shù): 17/35頁(yè)
文件大?。?/td> 294K
代理商: LH28F400SUHN-NC80
4M (512K × 8, 256K × 16) Flash Memory
LH28F400SU-NC
17
Figure 13. Set Write Protect
START
CSR.7 =
0
1
WRITE 57H
WRITE CONFIRM
DATA/ADDRESS
READ COMPATIBLE
STATUS REGISTER
CSR.7 =
0
0
1
1
(NOTE)
CSR.4, 5 =
28F400SUT-NC60-11
READ COMPATIBLE
STATUS REGISTER
OPERATION
COMPLETE
BUS
OPERATION
COMMAND
COMMENTS
Read
Write
Write
Set
Write Protect
Set Confirm
Check CSR.7
1 = WSM Ready
0 = WSM Busy
D = D0H
A = 0FFH
(A
- A
= 0, A
7
- A
0
= 1,
Others = X)
NOTE:
If CSR.4, 5 is set, as it is command sequence error,
should be cleared before further attempts are initiated.
Upon device power-up or toggle RP, Set Write
Protect command must be written to reflect the actual
lock-bit status.
Write FFH after the last operation to reset device to
Read Array Mode.
See Command Bus Cycle notes for description of codes.
D = 57H
A = X
Read
Check CSR.7
1 = WSM Ready
0 = WSM Busy
Read
Check CSR.4, 5
1 = Unsuccesful
0 = Successful
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