- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358792 > LH28F400SUHE-NC80 (Sharp Corporation) 4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory PDF資料下載
參數(shù)資料
| 型號： | LH28F400SUHE-NC80 |
| 廠商： | Sharp Corporation |
| 英文描述： | 4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory |
| 中文描述： | 的4Mb（512Kbit × 8，256千位× 16）5V單電壓閃存 |
| 文件頁數(shù)： | 29/35頁 |
| 文件大?。?/td> | 294K |
| 代理商： | LH28F400SUHE-NC80 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁當(dāng)前第29頁第30頁第31頁第32頁第33頁第34頁第35頁
4M (512K × 8, 256K × 16) Flash Memory
LH28F400SU-NC
29
AC Characteristics for CE
- Controlled Command Write Operations
1
V
CC
= 5.0 V ± 0.5 V, T
A
= 0°C to +70°C
NOTES:
1. Read timing during write and erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, but not 100% tested.
4. Write/Erase durations are measured to valid Status Register (CSR) Data.
5. Byte Write operations are typically performed with 1 Programming Pulse.
6. Address and Data are latched on the rising edge of CE
for all Command Write operations.
SYMBOL
PARAMETER
TYP.
V
CC
= 5.0 V ± 0.25 V V
CC
= 5.0 V ± 0.5 V
MIN.
MAX.
UNITS
NOTE
MIN.
MAX.
t
AVAV
t
PHWL
t
VPEH
t
WLEL
t
AVEH
t
DVEH
t
ELEH
t
EHDX
t
EHAX
t
EHWH
t
EHEL
t
GHEL
t
EHRL
Write Cycle Time
60
70
ns
RP
Setup to WE Going Low
400
430
ns
3
V
PP
Set up to CE
Going High
WE Setup to CE
Going Low
100
100
ns
3
0
0
ns
Address Setup to CE
Going High
55
60
ns
2, 6
Data Setup to CE
Going High
55
60
ns
2, 6
CE
Pulse Width
55
60
ns
Data Hold from CE
High
0
0
ns
2
Address Hold from CE
High
10
10
ns
2
WE Hold from CE
High
10
10
ns
CE
Pulse Width High
30
30
ns
Read Recovery before Write
0
0
ns
CE
High to RY
/BY
Going Low
100
100
ns
t
RHPL
RP
Hold from Valid Status Register
Data and RY
/BY
High
0
0
ns
3
t
PHEL
t
EHGL
RP
High Recovery to CE
Going Low
1
1
μs
Write Recovery before Read
60
65
ns
t
QVVL
V
PP
Hold from Valid Status Register
Data and RY
/BY
High
0
0
μs
t
EHQV1
t
EHQV2
Duration of Byte Write Operation
13
4.5
4.5
μs
4, 5
Duration of Block Erase Operation
0.3
0.3
s
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F400BVHE-BL85 | 4M Flash Memory |
| LH28F400SUB-Z0 | 4M (512K 】 8, 256K 】 16) Flash Memory |
| LH28F400BG | 4M-BIT(256KBx16) SmartVoltage Flash MEMORY |
| LH28F400SU | 4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory |
| LH28F400SUB | 4M (512K 】 8, 256K 】 16) Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F400SUHN | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M Flash Memory |
| LH28F400SUHN-NC80 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M Flash Memory |
| LH28F400SUHT | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4Mbit(512Kbit x 8,256 Kbit x 16) 5V Single Voltage Flash Memory |
| LH28F400SUHT-NC80 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4Mbit(512Kbit x 8,256 Kbit x 16) 5V Single Voltage Flash Memory |
| LH28F400SU-LC | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。