參數(shù)資料
型號(hào): LH28F400BGE-TL12
英文描述: x16 Flash EEPROM
中文描述: x16閃存EEPROM
文件頁(yè)數(shù): 38/56頁(yè)
文件大?。?/td> 373K
代理商: LH28F400BGE-TL12
LH28F160S5-L/S5H-L
- 38 -
NOTES :
1.
All currents are in RMS unless otherwise noted. Typical
values at nominal V
CC
voltage and T
A
= +25°C. These
currents are valid for all product versions (packages and
speeds).
2.
I
CCWS
and I
CCES
are specified with the device de-
selected. If reading or (multi) word/byte writing in erase
suspend mode, the device’s current draw is the sum of
I
CCWS
or I
CCES
and I
CCR
or I
CCW
, respectively.
3.
Includes STS.
4.
Block erases, full chip erases, (multi) word/byte writes
and block lock-bit configurations are inhibited when V
PP
V
PPLK
, and not guaranteed in the range between
V
PPLK
(max.) and V
PPH1
(min.) and above V
PPH1
(max.).
Automatic Power Saving (APS) reduces typical I
CCR
to
1 mA at 5 V V
CC
in static operation.
CMOS inputs are either V
CC
±0.2 V or GND±0.2 V. TTL
inputs are either V
IL
or V
IH
.
Sampled, not 100% tested.
5.
6.
7.
SYMBOL
PARAMETER
NOTE
V
CC =
5.0±0.5 V
MIN.
–0.5
UNIT
TEST
MAX.
0.8
V
CC
+0.5
CONDITIONS
V
IL
Input Low Voltage
7
V
V
IH
Input High Voltage
7
2.0
V
V
OL
Output Low Voltage
3, 7
0.45
V
V
CC
= V
CC
Min.
I
OL
= 5.8 mA
V
CC
= V
CC
Min.
I
OH
= –2.5 mA
V
CC
= V
CC
Min.
I
OH
= –2.5 mA
V
CC
= V
CC
Min.
I
OH
= –100 μA
V
OH1
Output High Voltage
(TTL)
3, 7
2.4
V
0.85
V
CC
V
CC
–0.4
V
V
OH2
Output High Voltage
(CMOS)
3, 7
V
V
PPLK
V
PP
Lockout Voltage during
Normal Operations
V
PP
Voltage during Write or Erase
Operations
V
CC
Lockout Voltage
4, 7
1.5
V
V
PPH1
4.5
5.5
V
V
LKO
2.0
V
6.2.3 DC CHARACTERISTICS (contd.)
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