參數(shù)資料
型號(hào): LH28F400BG
廠商: Sharp Corporation
英文描述: 4M-BIT(256KBx16) SmartVoltage Flash MEMORY
中文描述: 4分位(256KBx16)SmartVoltage閃光記憶
文件頁(yè)數(shù): 23/35頁(yè)
文件大小: 294K
代理商: LH28F400BG
4M (512K × 8, 256K × 16) Flash Memory
LH28F400SU-NC
23
AC Characteristics - Read Only Operations
1
V
CC
= 5.0 V ± 0.5 V, T
A
= 0°C to +70°C
SYMBOL
PARAMETER
V
CC
= 5.0 V ± 0.25 V
V
CC
= 5.0 V ± 0.5 V
UNITS
NOTE
MIN.
MAX.
MIN.
MAX.
t
AVAV
Read Cycle Time
60
70
ns
t
AVGL
Address Setup to OE
Going Low
0
0
ns
3
t
AVQV
Address to Output Delay
60
70
ns
t
ELQV
CE
to Output Delay
60
70
ns
2
t
PHQV
RP
High to Output Delay
400
430
ns
t
GLQV
OE
to Output Delay
30
35
ns
2
t
ELQX
CE
to Output in Low Z
0
0
ns
3
t
EHQZ
CE
to Output in High Z
25
30
ns
3
t
GLQX
OE
to Output in Low Z
0
0
ns
3
t
GHQZ
OE
to Output in High Z
25
30
ns
3
t
OH
Output Hold from Address, CE
or
OE
change, whichever occurs first
0
0
ns
3
t
FLGZ
BYTE Low to Output in High Z
40
45
ns
3
t
FLEL
t
FHEL
BYTE High or Low to CE
Low
15
15
ns
3
NOTES:
1. See AC Input/Output Reference Waveforms for timing measurements.
2. OE
may be delayed up to t
ELQV
- t
GLQV
after the falling edge of CE
without impact on t
ELQV
.
3. Sampled, not 100% tested.
4. Only to RP
, V
IH
(MIN.) = 2.4 V.
相關(guān)PDF資料
PDF描述
LH28F400SU 4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory
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LH28F400BG-L12 4M-BIT(256KBx16) SmartVoltage Flash MEMORY
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