參數(shù)資料
型號: LH28F320SKTD
廠商: Sharp Corporation
英文描述: 32M Flash Memory(32M閃速存儲器)
中文描述: 32M的閃存(32M的閃速存儲器)
文件頁數(shù): 3/4頁
文件大小: 33K
代理商: LH28F320SKTD
Migration from LH28F032SUTD . . .
LH28F320SKTD
Flash Application Note
3
AC/DC SPECIFICATIONS
The comparison of electrical specifications between
LH28F032SU and LH28F320SK is shown in Table 6.
Please note that the power consumption of these
devices varies depending on which operation modes
are in use. However, the programming and erase times
have been greatly improved in the SK model. Please
refer to the product data sheets for further information.
Table 5. Comparison of Status Registers
STATUS
LH28F320SK SR/XSR
LH28F032SU CSR
LH28F032SU GSR
LH28F032SU BSR
Write State Machine Status
Erase-Suspend Status
Program-Suspend Status
Operation Suspend Status
Erase Status
Data-Write Status
Device Operation Status
Improper Command Sequence
Device Sleep Status
Block Status
Block Lock Status
Block Operation Status
Block Operation Abort Status
Queue Status
V
PP
Status
Page Buffer Available Status
Page Buffer Status
Page Buffer Select Status
Reserved
SR.7
SR.6
SR.2
CSR.7
CSR.6
GSR.7
SR.6 or SR.2
SR.5
SR.4
SR.5 or SR.4
SR.5 and SR.4
N/A
SR.1
BSR.0
BSR.1, SR.5 or SR.4
N/A
N/A (XSR.7)
SR.3
XSR.7
N/A
N/A
XSR.0-6, BSR.2-7, SR.0
GSR.6
CSR.5
CSR.4
GSR.5
CSR.5 and CSR.4
GSR.4
BSR.7
BSR.6
BSR.5
BSR.4
BSR.3
BSR.2
GSR.3
CSR.3
GSR.2
GSR.1
GSR.0
CSR.2-0
BSR.0
Table 6. Comparison of AD/CD Characteristics
PARAMETER
LH28F032SU
LH28F320SK
Supply Voltage (V
CC
/V
PP
)
Read Current (MAX.)
5 V/5 V
60 mA
60 mA
35 mA
40 mA
25 mA
40 μA
10 μA
16 μA
70 ns
30 ns
8 μs(6 μs)
6.5 μs (5.5 μs)
0.5 s
0.7 s
3.3 V/5 V
35 mA
60 mA
12 mA
40 mA
12 mA
30 μA
10 μA
16 μA
120 ns
45 ns
12 μs (9 μs)
9.5 μs (6.5 μs)
0.8 s
0.9 s
160 ns
5 V/5 V
50 mA
80 mA
35 mA
40 mA
30 mA
100 μA
5 μA
15 μA
70 ns
35 ns
9.24 μs
2 μs
0.31 s
0.34 s
3.3 V/5 V
25 mA
80 mA
17 mA
40 mA
17 mA
100 μA
5 μA
15 μA
100 ns
45 ns
12.95 μs
2.7 μs
0.43 s
0.41 s
3.3 V/3.3 V
25 mA
80 mA
17 mA
40 mA
17 mA
100 μA
5 μA
15 μA
100 ns
45 ns
19.51 μs
5.66 μs
0.72 s
0.55 s
120 ns
I
CC
R
I
PP
W
I
CC
W
I
PP
E
I
CC
E
I
CC
S
I
PP
D
I
CC
D
Write Current (MAX.)
Erase Current (MAX.)
Standby Current (MAX.)
Deep Power Down Current (MAX.)
Address Access Time (MAX.)
OE Access Time (MAX.)
Byte Write Time (TYP.)
Byte Write time with page buffer (TYP.)
Block Write Time (TYP.)
Block Erase Time (TYP.)
Access Time at 2.7 V at (MAX.)
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