參數資料
型號: LH28F320BFHE-PBTLZ2
廠商: Sharp Corporation
英文描述: 32M (x16) Flash Memory
中文描述: 32M的(x16)的快閃記憶體
文件頁數: 4/36頁
文件大?。?/td> 689K
代理商: LH28F320BFHE-PBTLZ2
LHF32FD2 2
LH28F320BFHE-PBTLZ2
32Mbit (2Mbit
×
16)
Page Mode Dual Work Flash MEMORY
32M density with 16Bit I/O Interface
High Performance Reads
80/35ns 8-Word Page Mode
Configurative 4-Plane Dual Work
Flexible Partitioning
Read operations during Block Erase or (Page Buffer)
Program
Status Register for Each Partition
Low Power Operation
2.7V Read and Write Operations
V
CCQ
for Input/Output Power Supply Isolation
Automatic Power Savings Mode Reduces I
CCR
in Static Mode
Enhanced Code + Data Storage
5
μ
s Typical Erase/Program Suspends
OTP (One Time Program) Block
4-Word Factory-Programmed Area
4-Word User-Programmable Area
High Performance Program with Page Buffer
16-Word Page Buffer
5
μ
s/Word (Typ.) at 12V V
PP
Operating Temperature -40
°
C to +85
°
C
CMOS Process (P-type silicon substrate)
Flexible Blocking Architecture
Eight 4K-word Parameter Blocks
Sixty-three 32K-word Main Blocks
Bottom Parameter Location
Enhanced Data Protection Features
Individual Block Lock and Block Lock-Down with
Zero-Latency
All blocks are locked at power-up or device reset.
Absolute Protection with V
PP
V
PPLK
Block Erase, Full Chip Erase, (Page Buffer) Word
Program Lockout during Power Transitions
Automated Erase/Program Algorithms
3.0V Low-Power
11μ
s/Word (Typ.)
Programming
12V No Glue Logic 9
μ
s/Word (Typ.)
Production Programming and 0.5s Erase (Typ.)
Cross-Compatible Command Support
Basic Command Set
Common Flash Interface (CFI)
Extended Cycling Capability
Minimum 100,000 Block Erase Cycles
48-Lead TSOP
ETOX
TM*
Flash Technology
Not designed or rated as radiation hardened
The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low
power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can
operate at V
CC
=2.7V-3.6V and V
PP
=1.65V-3.6V or 11.7V-12.3V. Its low voltage operation capability greatly extends
battery life for portable applications.
The product provides high performance asynchronous page mode. It allows code execution directly from Flash, thus
eliminating time consuming wait states. Furthermore, its newly configurative partitioning architecture allows flexible dual
work operation.
The memory array block architecture utilizes Enhanced Data Protection features, and provides separate Parameter and Main
Blocks that provide maximum flexibility for safe nonvolatile code and data storage.
Fast program capability is provided through the use of high speed Page Buffer Program.
Special OTP (One Time Program) block provides an area to store permanent code such as a unique number.
* ETOX is a trademark of Intel Corporation.
Rev. 2.44
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