- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369759 > LH28F160S3R-L13 EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC PDF資料下載
參數(shù)資料
| 型號： | LH28F160S3R-L13 |
| 英文描述： | EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC |
| 中文描述： | 的EEPROM | FLASH動畫| 1MX16/2MX8 |的CMOS | TSSOP封裝| 56PIN |塑料 |
| 文件頁數(shù)： | 20/56頁 |
| 文件大?。?/td> | 373K |
| 代理商： | LH28F160S3R-L13 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁當(dāng)前第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁
- 20 -
LH28F160S5-L/S5H-L
Reliable multi byte writes can only occur when V
CC
=
V
CC1/2
and V
PP =
V
PPH1
. In the absence of this
high voltage, memory contents are protected
against multi word/byte writes. If multi word/byte
write is attempted while V
PP
≤
V
PPLK
, status
register bits SR.3 and SR.4 will be set to "1".
Successful multi word/byte write requires that the
corresponding block lock-bit be cleared or, if set,
that WP# = V
IH
. If multi byte write is attempted
when the corresponding block lock-bit is set and
WP# = V
IL
, SR.1 and SR.4 will be set to "1".
4.10 Block Erase Suspend Command
The Block Erase Suspend command allows block
erase interruption to read or (multi) word/byte write
data in another block of memory. Once the block
erase process starts, writing the Block Erase
Suspend command requests that the WSM
suspend the block erase sequence at a
predetermined point in the algorithm. The device
outputs status register data when read after the
Block Erase Suspend command is written. Polling
status register bits SR.7 and SR.6 can determine
when the block erase operation has been
suspended (both will be set to "1"). STS will also
transition to High Z. Specification t
WHRH2
defines
the block erase suspend latency.
At this point, a Read Array command can be
written to read data from blocks other than that
which is suspended. A (Multi) Word/Byte Write
command sequence can also be issued during
erase suspend to program data in other blocks.
Using the (Multi) Word/Byte Write Suspend
command (see
Section 4.11
), a (multi) word/byte
write operation can also be suspended. During a
(multi) word/byte write operation with block erase
suspended, status register bit SR.7 will return to "0"
and the STS (if set to RY/BY#) output will transition
to V
OL
. However, SR.6 will remain "1" to indicate
block erase suspend status.
The only other valid commands while block erase is
suspended are Read Status Register and Block
Erase Resume. After a Block Erase Resume
command is written to the flash memory, the WSM
will continue the block erase process. Status register
bits SR.6 and SR.7 will automatically clear and STS
will return to V
OL
. After the Erase Resume
command is written, the device automatically
outputs status register data when read (see
Fig. 8
).
V
PP
must remain at V
PPH1
(the same V
PP
level
used for block erase) while block erase is
suspended. RP# must also remain at V
IH
. Block
erase cannot resume until (multi) word/byte write
operations initiated during block erase suspend
have completed.
4.11 (Multi) Word/Byte Write Suspend
Command
The (Multi) Word/Byte Write Suspend command
allows (multi) word/byte write interruption to read
data in other flash memory locations. Once the
(multi) word/byte write process starts, writing the
(Multi) Word/Byte Write Suspend command
requests that the WSM suspend the (multi)
word/byte write sequence at a predetermined point
in the algorithm. The device continues to output
status register data when read after the (Multi)
Word/Byte Write Suspend command is written.
Polling status register bits SR.7 and SR.2 can
determine when the (multi) word/byte write
operation has been suspended (both will be set to
"1"). STS will also transition to High Z. Specification
t
WHRH1
defines the (multi) word/byte write suspend
latency.
At this point, a Read Array command can be
written to read data from locations other than that
which is suspended. The only other valid
commands while (multi) word/byte write is
suspended are Read Status Register and (Multi)
Word/Byte Write Resume. After (Multi) Word/Byte
Write Resume command is written to the flash
memory, the WSM will continue the (multi)
word/byte write process. Status register bits SR.2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F320BFHE-PBTL70 | Flash ROM |
| LH28F320BFHE-PBTLZA | Flash ROM |
| LH28F320BFHE-PTTL60 | Flash ROM |
| LH28F320BFHE-PTTL70 | Flash ROM |
| LH28F320BFHE-PTTLZ1 | x16 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F160S3T-L10 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Flash Memory 16M (2MB 】 8/1MB 】 16) |
| LH28F160S3T-L10A | 功能描述:IC FLASH 16MBIT 100NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:1M (64K x 16) 速度:150ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| LH28F160S3T-L13 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| LH28F160S5 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16-MBIT(2MBx8/MBx16)Smart 5 Flash MEMORY |
| LH28F160S5B-L10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。