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參數(shù)資料
| 型號： | LH28F160S3HNS-L10 |
| 英文描述： | Flash ROM |
| 中文描述： | 閃存ROM |
| 文件頁數(shù)： | 44/56頁 |
| 文件大?。?/td> | 373K |
| 代理商： | LH28F160S3HNS-L10 |
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LH28F160S5-L/S5H-L
- 44 -
SYMBOL
t
AVAV
PARAMETER
NOTE
MIN.
70
MAX.
MIN.
90
MAX.
MIN.
100
MAX.
Write Cycle Time
RP# High Recovery to WE#
Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
WP# V
IH
Setup to WE#
Going High
V
PP
Setup to WE# Going High
Address Setup to WE#
Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to STS Going Low
Write Recovery before Read
V
PP
Hold from Valid SRD,
STS High Z
WP# V
IH
Hold from Valid SRD,
STS High Z
NOTES :
1.
Read timing characteristics during block erase, full chip
erase, (multi) word/byte write and block lock-bit
configuration operations are the same as during read-
only operations. Refer to
Section 6.2.4
CHARACTERISTICS
" for read-only operations.
2.
Sampled, not 100% tested.
3.
Refer to
Table 3
for valid A
IN
and D
IN
for block erase,
full chip erase, (multi) word/byte write or block lock-bit
configuration.
4.
V
PP
should be held at V
PPH1
until determination of block
erase, full chip erase, (multi) word/byte write or block
lock-bit configuration success (SR.1/3/4/5 = 0).
ns
t
PHWL
2
1
1
1
μs
t
ELWL
t
WLWH
10
40
10
40
10
40
ns
ns
t
SHWH
2
100
100
100
ns
t
VPWH
2
100
100
100
ns
t
AVWH
3
40
40
40
ns
t
DVWH
t
WHDX
t
WHAX
t
WHEH
t
WHWL
t
WHRL
t
WHGL
3
40
5
5
10
30
40
5
5
10
30
40
5
5
10
30
ns
ns
ns
ns
ns
ns
ns
90
90
90
0
0
0
t
QVVL
2, 4
0
0
0
ns
t
QVSL
2, 4
0
0
0
ns
VERSIONS
V
CC
±0.25 V
V
CC
±0.5 V
(NOTE 5)
LH28F160S5H-L70
(NOTE 6)
LH28F160S5H-L10
(NOTE 6)
LH28F160S5H-L70
UNIT
V
CC
= 5.0±0.25 V, 5.0±0.5 V, T
A
= –40 to +85°C
"
AC
5.
See
Fig. 12
"
Transient Input/Output Reference
Waveform
" and
Fig. 14
"
Transient Equivalent Testing
Load Circuit
" (High Speed Configuration) for testing
characteristics.
See
Fig. 13
"
Transient Input/Output Reference
Waveform
" and
Fig. 14
"
Transient Equivalent Testing
Load Circuit
" (Standard Configuration) for testing
characteristics.
6.
6.2.5 AC CHARACTERISTICS - WRITE OPERATIONS (contd.)
(NOTE 1)
[LH28F160S5H-L]
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F160S3HNS-L12 | EEPROM |
| LH28F160S3HR-L10 | x8/x16 Flash EEPROM |
| LH28F160S3HR-L13 | EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC |
| LH28F160S3HT-L10 | x8/x16 Flash EEPROM |
| LH28F160S3HT-L13 | EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F160S3HNS-L10 A | 制造商:SHARPELECTRONIC 功能描述: |
| LH28F160S3HNS-L12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| LH28F160S3HNS-L13 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16-MBIT(2MBx8/1MBx16) Smart 3 Flash MEMORY |
| LH28F160S3HNS-TV | 功能描述:IC FLASH 16MBIT 100NS 56SSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
| LH28F160S3HR-L10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
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