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參數(shù)資料
| 型號： | LH28F160BJB-BTL90 |
| 英文描述： | Flash ROM |
| 中文描述： | 閃存ROM |
| 文件頁數(shù)： | 27/56頁 |
| 文件大小： | 373K |
| 代理商： | LH28F160BJB-BTL90 |
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LH28F160S5-L/S5H-L
- 27 -
Start
Write E8H,
Start Address
Read
Status Register
0
XSR.7 =
1
Write Word or Byte Count (N)_1,
Start Address
Write Buffer Data,
Start Address
X = 0
Write Buffer Data,
Device Address
NOTES :
1. Byte or word count values on DQ
0-7
are loaded into the
count register.
2. Write buffer contents will be programmed at the start
address.
3. Align the start address on a write buffer boundary for
maximum programming performance.
4. The device aborts the Multi Word/Byte Write command
if the current address is outside of the original block address.
5. The status register indicates an "improper command
sequence" if the Multi Word/Byte Write command is aborted.
Follow this with a Clear Status Register command.
SR full status check can be done after each multi word/byte
write or after a sequence of multi word/byte writes.
Write FFH after the last multi word/byte write operation to
place device in read array mode.
BUS
OPERATION
Write
Read
Standby
Write
(NOTE 1)
COMMAND
Setup Multi
Word/Byte Write
COMMENTS
Data = E8H
Addr = Start Address
Data = Word or Byte Count (N)_1
Addr = Start Address
Write
(NOTE 2, 3)
Data = Buffer Data
Addr = Start Address
Write
(NOTE 4, 5)
Data = Buffer Data
Addr = Device Address
Write
Data = D0H
Addr = X
Read
Status Register Data
Standby
Extended Status Register Data
Check SR.7
1 = WSM Ready
0 = WSM Busy
Multi Word/Byte
Write Abort
Yes
No
No
X = N
No
Write Buffer
Time-Out
Yes
Full Status
Check if Desired
SR.7 =
Multi Word/Byte
Write Complete
0
1
X = X + 1
Write D0H
Read
Status Register
Yes
No
Yes
No
Suspend Multi Word/Byte
Write Loop
Suspend
Multi Word/Byte
Write
Write Another
Block Address
Check XSR.7
1 = Multi Word/Byte Write Ready
0 = Multi Word/Byte Write Busy
Yes
Abort
Buffer Write
Command
Another
Buffer
Write
Fig. 6 Automated Multi Word/Byte Write Flowchart
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F160S3HNS-L10 | Flash ROM |
| LH28F160S3HNS-L12 | EEPROM |
| LH28F160S3HR-L10 | x8/x16 Flash EEPROM |
| LH28F160S3HR-L13 | EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC |
| LH28F160S3HT-L10 | x8/x16 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F160BJB-TTL90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM |
| LH28F160BJB-TTLZS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM |
| LH28F160BJE-BTL90 | 功能描述:IC FLASH 16MBIT 90NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| LH28F160BJE-TTL90 | 制造商:Sharp Microelectronics Corporation 功能描述:NOR Flash Parallel 3.3V 16Mbit 2M/1M x 8bit/16bit 90ns 48-Pin TSOP |
| LH28F160BJHB-BTL90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM |
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