參數(shù)資料
型號(hào): LH28F016SUHT-10
廠商: Sharp Corporation
英文描述: 16Mbit(1Mbit x 16, 2Mbit x 8) 5V Single Voltage Flash Memory
中文描述: 16兆(容量為1Mbit × 16,2Mbit的× 8)5V單電壓閃存
文件頁(yè)數(shù): 34/37頁(yè)
文件大?。?/td> 326K
代理商: LH28F016SUHT-10
LH28F016SU
16M (1M × 16, 2M × 8) Flash Memory
34
AC Characteristics for Page Buffer Write Operations
1
T
A
= 0°C to +70°C
NOTES:
CE
is defined as the latter of CE
0
or CE
1
going Low or the first of CE
0
or CE
1
going High.
1. These are WE
controlled write timings, equivalent CE
controlled write timings apply.
2. Sampled, but not 100% tested.
3. Address must be valid during the entire WE
Low pulse.
SYMBOL
PARAMETER
V
CC
= 3.3 V ± 0.3 V
UNITS
NOTE
TYP.
MIN.
MAX.
t
AVAV
Write Cycle Time
120
ns
t
ELWL
CE
Setup to WE Going Low
10
ns
t
AVWL
Address Setup to WE Going Low
0
ns
3
t
DVWH
Data Setup to WE Going High
75
ns
2
t
WLWH
WE Pulse Width
75
ns
t
WHDX
Data Hold from WE High
10
ns
2
t
WHAX
Address Hold from WE High
10
ns
2
t
WHEH
CE
Hold from WE High
10
ns
t
WHWL
WE Pulse Width High
45
ns
t
GHWL
Read Recovery before Write
0
ns
t
WHGL
Write Recovery before Read
95
ns
SYMBOL
PARAMETER
V
CC
= 5.0 V ± 0.25 V
V
CC
= 5.0 V ± 0.5 V
UNITS
NOTE
TYP.
MIN.
MAX.
TYP.
MIN.
MAX.
t
AVAV
Write Cycle Time
70
80
ns
t
ELWL
CE
Setup to WE Going Low
0
0
ns
t
AVWL
Address Setup to WE Going Low
0
0
ns
3
t
DVWH
Data Setup to WE Going High
50
50
ns
2
t
WLWH
WE Pulse Width
40
50
ns
t
WHDX
Data Hold from WE High
0
0
ns
2
t
WHAX
Address Hold from WE High
10
10
ns
2
t
WHEH
CE
Hold from WE High
10
10
ns
t
WHWL
WE Pulse Width High
30
30
ns
t
GHWL
Read Recovery before Write
0
0
ns
t
WHGL
Write Recovery before Read
60
65
ns
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