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參數(shù)資料
| 型號： | LH28F016SCR-L120 |
| 元件分類： | EEPROM |
| 英文描述： | EEPROM |
| 中文描述： | EEPROM的 |
| 文件頁數(shù)： | 46/56頁 |
| 文件大?。?/td> | 373K |
| 代理商： | LH28F016SCR-L120 |
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SYMBOL
t
AVAV
PARAMETER
NOTE
MIN.
70
MAX.
MIN.
80
MAX.
MIN.
100
MAX.
Write Cycle Time
RP# High Recovery to CE#
Going Low
WE# Setup to CE# Going Low
CE# Pulse Width
WP# V
IH
Setup to CE# Going High
V
PP
Setup to CE# Going High
Address Setup to CE# Going High
Data Setup to CE# Going High
Data Hold from CE# High
Address Hold from CE# High
WE# Hold from CE# High
CE# Pulse Width High
CE# High to STS Going Low
Write Recovery before Read
V
PP
Hold from Valid SRD,
STS High Z
WP# V
IH
Hold from Valid SRD,
STS High Z
NOTES :
1.
In systems where CE# defines the write pulse width
(within a longer WE# timing waveform), all setup, hold
and inactive WE# times should be measured relative to
the CE# waveform.
2.
Sampled, not 100% tested.
3.
Refer to
Table 3
for valid A
IN
and D
IN
for block erase,
full chip erase, (multi) word/byte write or block lock-bit
configuration.
4.
V
PP
should be held at V
PPH1
until determination of block
erase, full chip erase, (multi) word/byte write or block
lock-bit configuration success (SR.1/3/4/5 = 0).
ns
t
PHEL
2
1
1
1
μs
t
WLEL
t
ELEH
t
SHEH
t
VPEH
t
AVEH
t
DVEH
t
EHDX
t
EHAX
t
EHWH
t
EHEL
t
EHRL
t
EHGL
0
50
100
100
40
40
5
5
0
25
0
50
100
100
40
40
5
5
0
25
0
50
100
100
40
40
5
5
0
25
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2
2
3
3
90
90
90
0
0
0
t
QVVL
2, 4
0
0
0
ns
t
QVSL
2, 4
0
0
0
ns
LH28F160S5-L/S5H-L
- 46 -
VERSIONS
V
CC
±0.25 V
V
CC
±0.5 V
(NOTE 5)
LH28F160S5-L70
(NOTE 6)
LH28F160S5-L10
(NOTE 6)
LH28F160S5-L70
UNIT
V
CC
= 5.0±0.25 V, 5.0±0.5 V, T
A
= 0 to +70°C
6.2.6 ALTERNATIVE CE#-CONTROLLED WRITES
(NOTE 1)
[LH28F160S5-L]
5.
See
Fig. 12
"
Transient Input/Output Reference
Waveform
" and
Fig. 14
"
Transient Equivalent Testing
Load Circuit
" (High Speed Configuration) for testing
characteristics.
See
Fig. 13
"
Transient Input/Output Reference
Waveform
" and
Fig. 14
"
Transient Equivalent Testing
Load Circuit
" (Standard Configuration) for testing
characteristics.
6.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F016SCR-L150 | EEPROM |
| LH28F016SCR-L90 | EEPROM |
| LH28F016SCR-L95 | EEPROM|FLASH|2MX8|CMOS|TSSOP|40PIN|PLASTIC |
| LH28F016SCT-L100 | EEPROM |
| LH28F016SCT-L12 | x8 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F016SCR-L150 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| LH28F016SCR-L90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| LH28F016SCR-L95 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|2MX8|CMOS|TSSOP|40PIN|PLASTIC |
| LH28F016SCT | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Smart voltage 16Mbit Flash Memory |
| LH28F016SCT-L100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
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