參數(shù)資料
      型號: LH28F016SCHB-L90
      元件分類: EEPROM
      英文描述: EEPROM
      中文描述: EEPROM的
      文件頁數(shù): 50/56頁
      文件大?。?/td> 373K
      代理商: LH28F016SCHB-L90
      LH28F160S5-L/S5H-L
      - 50 -
      V
      CC
      = 5.0±0.25 V, 5.0±0.5 V, T
      A
      = 0 to +70°C or
      –40 to +85°C
      6.2.8 BLOCK ERASE, FULL CHIP ERASE, (MULTI) WORD/BYTE WRITE AND
      BLOCK LOCK-BIT CONFIGURATION PERFORMANCE
      (NOTE 3, 4)
      NOTES :
      1.
      Typical values measured at T
      A
      = +25°C and nominal
      voltages. Assumes corresponding block lock-bits are not
      set. Subject to change based on device characterization.
      2.
      Excludes system-level overhead.
      3.
      These performance numbers are valid for all speed
      versions.
      Sampled, not 100% tested.
      4.
      SYMBOL
      PARAMETER
      NOTE
      V
      CC
      = 5.0±0.5 V
      TYP.
      (NOTE 1)
      UNIT
      MIN.
      MAX.
      t
      WHQV1
      t
      EHQV1
      t
      WHQV1
      t
      EHQV1
      Word/Byte Write Time (using W/B write, in word mode)
      2
      9.24
      TBD
      μs
      Word/Byte Write Time (using W/B write, in byte mode)
      2
      9.24
      TBD
      μs
      Word/Byte Write Time (using multi word/byte write)
      Block Write Time (using W/B write, in word mode)
      Block Write Time (using W/B write, in byte mode)
      Block Write Time (using multi word/byte write)
      2
      2
      2
      2
      2
      TBD
      3.7
      7.5
      1.5
      μs
      s
      s
      s
      0.31
      0.61
      0.13
      t
      WHQV2
      t
      EHQV2
      Block Erase Time
      2
      0.34
      10
      s
      Full Chip Erase Time
      10.9
      TBD
      s
      t
      WHQV3
      t
      EHQV3
      t
      WHQV4
      t
      EHQV4
      t
      WHRH1
      t
      EHRH1
      t
      WHRH2
      t
      EHRH2
      Set Block Lock-Bit Time
      2
      9.24
      TBD
      μs
      Clear Block Lock-Bits Time
      2
      0.34
      TBD
      s
      Write Suspend Latency Time to Read
      5.6
      7
      μs
      Erase Suspend Latency Time to Read
      9.4
      13.1
      μs
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