參數(shù)資料
型號(hào)： LH28F016SC-L
廠商： Sharp Corporation
英文描述： 16 M-bit (2 MB x 8) SmartVoltage Flash Memories
中文描述： 16 M位（2字節(jié)× 8）SmartVoltage閃存
文件頁(yè)數(shù)： 4/37頁(yè)
文件大小： 326K
代理商： LH28F016SC-L
LH28F016SU
16M (1M × 16, 2M × 8) Flash Memory
4
PIN DESCRIPTION
SYMBOL
TYPE
NAME AND FUNCTION
A
0
INPUT
BYTE-SELECT ADDRESS:
Selects between high and low byte when device is in x8
mode. This address is latched in x8 Data Writes. Not used in x16 mode (i.e., the A
0
input buffer is turned off when BYTE is high).
A
1
- A
15
INPUT
WORD-SELECT ADDRESSES:
Select a word within one 64K block. A
6
-
A
15
selects
1 of 1024 rows, and A
1
- A
5
selects 16 of 512 columns. These addresses are
latched during Data Writes.
A
16
- A
20
INPUT
BLOCK-SELECT ADDRESSES:
Select 1 of 32 Erase blocks. These addresses are
latched during Data Writes, Erase and Lock-Block operations.
DQ
0
- DQ
7
INPUT/OUTPUT
LOW-BYTE DATA BUS:
Inputs data and commands during CUI write cycles.
Outputs array, buffer, identifier or status data in the appropriate Read mode. Floated
when the chip is de-selected or the outputs are disabled.
DQ
8
- DQ
15
INPUT/OUTPUT
HIGH-BYTE DATA BUS
: Inputs data during x16 Data-Write operations. Outputs
array, buffer or identifier data in the appropriate Read mode; not used for Status
register reads. Floated when the chip is de-selected or the outputs are disabled.
CE
0
, CE
1
INPUT
CHIP ENABLE INPUTS
: Activate the device’s control logic, input buffers, decoders and
sense amplifiers. With either CE
0
or CE
1
high, the device is de-selected and power
consumption reduces to Standby levels upon completion of any current Data-Write or
Erase operations. Both CE
0
, CE
1
must be low to select the device. All timing
specifications are the same for both signals. Device Selection
occ
urs with the latter
falling edge of CE
0
or CE
1
. The first rising edge of CE
0
or CE
1
disables the device.
RESET/POWER-DOWN:
With RP
low, the device is reset, any current operation is
aborted and device is put into the deep power down mode. When the power is
turned on, RP
pin is turned to low in order to return the device to default con-
figuration. When the 3/5
pin is switched, or when the power transition is occurred, or
at the power on/off, RP
is required to stay low in order to protect data from noise.
When returning from Deep Power-Down, a recovery time of 400
ns
(V
CC
+5.0 V
±0.5 V) is required to allow these circuits to power-up. When RP
goes
low, any current or pending WSM operation(s) are terminated, and the device is
reset. All Status registers return to ready (with all status flags cleared). After
returning, the device is in read array mode.
RP
INPUT
OE
INPUT
OUTPUT ENABLE:
Gates device data through the output buffers when low. The
outputs float to tri-state off when OE
is high.
NOTE:
CE
X
overrides OE
, and OE
overrides WE.
WRITE ENABLE:
Controls access to the CUI, Page Buffers, Data Queue Registers
and Address Queue Latches. WE is active low, and latches both address and data
(command or array) on its rising edge.
WE
INPUT
RY
/BY
OPEN DRAIN
OUTPUT
READY/BUSY:
Indicates status of the internal WSM. When low, it indicates that the
WSM is busy performing an operation. RY/BY# high indicates that the WSM is ready
for new operations (or WSM has completed all pending operations), or Erase is
Suspended, or the device is in deep power-down mode. This output is always active
(i.e., not floated to tri-state off when OE
or CE
0
, CE
1
are high), except if a RY
/BY
Pin Disable command is issued.
相關(guān)PDF資料
PDF描述
LH28F016SCH 16-MBIT(2 MB x 8) SmartVoltage Flash MEMORY
LH28F016SCH-L 16 M-bit (2 MB x 8) SmartVoltage Flash Memories
LH28F016SCHB 16Mbit Flash Memory
LH28F016SCT Smart voltage 16Mbit Flash Memory
LH28F016SU 16M (1M 】 16, 2M 】 8) Flash Memory
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