參數(shù)資料
型號(hào)： LH28F016LL
廠商： Sharp Corporation
英文描述： 16M (1M 】 16, 2M 】 8) Flash Memory
中文描述： 1,600（100萬(wàn)】16日，2分】8）閃存
文件頁(yè)數(shù)： 2/37頁(yè)
文件大?。?/td> 326K
代理商： LH28F016LL
LH28F016SU
16M (1M × 16, 2M × 8) Flash Memory
2
Figure 2. TSOP Reverse Bend Configuration
INTRODUCTION
Sharp’s LH28F016SU 16M Flash Memory is a revo-
lutionary architecture which enables the design of truly
mobile, high performance, personal computing and com-
munication products. With innovative capabilities, 5 V
single voltage operation and very high read/write per-
formance, the LH28F016SU is also the ideal choice for
designing embedded mass storage memory systems.
The LH28F016SU is a very high density, highest per-
formance non-volatile read/write solution for solid-state
storage applications. Its symmetrically blocked archi-
tecture (100% compatible with the LH28F008SA 8M
Flash memory), extended cycling, low power 3.3 V
operation, very fast write and read performance and
selective block locking provide a highly flexible memory
component suitable for high density memory cards,
Resident Flash Arrays and PCMCIA-ATA Flash Drives.
The LH28F016SU’s dual read voltage enables the
design of memory cards which can interchangeably be
read/written in 3.3 V and 5.0 V systems. Its x8/x16
architecture allows the optimization of memory to pro-
cessor interface. The flexible block locking option
enables bundling of executable application software in
a Resident Flash Array or memory card. Manufactured
on Sharp’s 0.55 μm ETOX process technology, the
LH28F016SU is the most cost-effective, high-density
3.3 V flash memory.
DESCRIPTION
The LH28F016SU is a high performance 16M
(16,777,216 bit) block erasable non-volatile random
access memory organized as either 1M × 16 or 2M × 8.
The LH28F016SU includes thirty-two 64K (65,536)
blocks or thirty-two 32-KW (32,768) blocks. A chip
memory map is shown in Figure 4.
The implementation of a new architecture, with many
enhanced features, will improve the device operating
characteristics and results in greater product reliability
and ease of use.
Among the significant enhancements of the
LH28F016SU:
5 V Write/Erase Operation (5 V V
PP
)
3.3 V Low Power Capability (2.7 V V
CC
Read)
Improved Write Performance
Dedicated Block Write/Erase Protection
A 3/5
input pin reconfigures the device internally for
optimized 3.3 V or 5.0 V read/write operation.
The LH28F016SU will be available in a 56-pin,
1.2 mm thick × 14 mm × 20 mm TSOP (Type I) pack-
age. This form factor and pinout allow for very high board
layout densities.
28F016SUT-17
TOP VIEW
56-PIN TSOP
2
3
4
5
8
9
A
16
V
CC
A
15
A
14
A
13
A
12
A
19
A
18
A
20
53
52
51
50
49
48
45
42
41
NC
6
7
A
17
47
46
DQ
15
DQ
7
DQ
14
DQ
6
GND
GND
DQ
11
10
11
12
55
54
OE
13
44
DQ
4
V
CC
43
14
15
16
17
18
19
20
39
36
40
38
37
DQ
3
DQ
10
DQ
2
V
CC
DQ
9
DQ
1
A
10
A
9
A
8
GND
A
11
V
PP
RP
CE
0
WE
DQ
13
DQ
5
DQ
12
56
1
CE
1
3/5
WP
21
22
23
24
25
26
27
28
A
4
A
3
A
2
A
1
A
5
A
7
A
6
34
33
DQ
8
DQ
0
35
31
32
30
29
A
0
BYTE
NC
NC
RY/BY
相關(guān)PDF資料
PDF描述
LH28F016SA 16M (1M 】 16, 2M 】 8) Flash Memory
LH28F016SANS 16 Mbit(1 Mbit x 16, 2 Mbit x 8)
LH28F016SC-L 16 M-bit (2 MB x 8) SmartVoltage Flash Memories
LH28F016SCH 16-MBIT(2 MB x 8) SmartVoltage Flash MEMORY
LH28F016SCH-L 16 M-bit (2 MB x 8) SmartVoltage Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F016LLT 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
LH28F016SA 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16M (1M 】 16, 2M 】 8) Flash Memory
LH28F016SANS 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16 Mbit(1 Mbit x 16, 2 Mbit x 8)
LH28F016SANS-70 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16 Mbit(1 Mbit x 16, 2 Mbit x 8)
LH28F016SAT-100 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
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