參數(shù)資料
型號(hào)： LH28F008SCR-L12
英文描述： x8 Flash EEPROM
中文描述： x8閃存EEPROM的
文件頁(yè)數(shù)： 14/56頁(yè)
文件大?。?/td> 373K
代理商： LH28F008SCR-L12
LH28F160S5-L/S5H-L
- 14 -
sequence) may be performed. The status register
may be polled to determine if an error occurs
during the sequence.
To clear the status register, the Clear Status
Register command (50H) is written. It functions
independently of the applied V
PP
voltage. RP#
must be V
IH
. This command is not functional during
block erase, full chip erase, (multi) word/byte write,
block lock-bit configuration, block erase suspend or
(multi) word/byte write suspend modes.
4.5
Query database can be read by writing Query
command (98H). Following the command write,
read cycle from address shown in
Table 6 through
Table 10
retrieve the critical information to write,
erase and otherwise control the flash component.
A
0
of query offset address is ignored when x8
mode (BYTE# = V
IL
).
Query Command
Query data are always presented on the low-byte
data output (DQ
0
-DQ
7
). In x16 mode, high-byte
(DQ
8
-DQ
15
) outputs 00H. The bytes not assigned
to any information or reserved for future use are set
to "0". This command functions independently of
the V
PP
voltage. RP# must be V
IH
.
Table 5 Example of Query Structure Output
4.5.1 BLOCK STATUS REGISTER
This field provides lock configuration and erase
status for the specified block. These informations
are only available when device is ready (SR.7 = 1).
If block erase or full chip erase operation is finished
irregularly, block erase status bit will be set to "1". If
bit 1 is "1", this block is invalid.
MODE
OFFSET ADDRESS
OUTPUT
DQ
15-8
DQ
7-0
A
5
, A
4
, A
3
, A
2
, A
1
, A
0
1, 0, 0, 0, 0, 0 (20H)
1, 0, 0, 0, 0, 1 (21H)
1, 0, 0, 0, 1, 0 (22H)
1, 0, 0, 0, 1, 1 (23H)
A
5
, A
4
, A
3
, A
2
, A
1
1, 0, 0, 0, 0 (10H)
1, 0, 0, 0, 1 (11H)
High Z
High Z
High Z
High Z
"Q"
"Q"
"R"
"R"
x8 mode
x16 mode
00H
00H
"Q"
"R"
Table 6 Query Block Status Register
OFFSET
(Word Address)
(BA+2)H
LENGTH
DESCRIPTION
01H
Block Status Register
bit0
Block Lock Configuration
0 = Block is unlocked
1 = Block is locked
bit1
Block Erase Status
0 = Last erase operation completed successfully
1 = Last erase operation not completed successfully
bit2-7 Reserved for future use
NOTE :
BA = The beginning of a Block Address.
相關(guān)PDF資料
PDF描述
LH28F008SCR-L85 x8 Flash EEPROM
LH28F008SCR-T12 x8 Flash EEPROM
LH28F008SCR-T15 x8 Flash EEPROM
LH28F008SCR-TL12 x8 Flash EEPROM
LH28F008SCR-TL15 x8 Flash EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F008SCR-L85 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
LH28F008SCR-T12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
LH28F008SCR-T15 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
LH28F008SCR-TL12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
LH28F008SCR-TL15 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
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