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參數(shù)資料
| 型號(hào)： | LH28F004SU-NC |
| 廠商： | Sharp Corporation |
| 英文描述： | 4M (512K 】 8) Flash Memory |
| 中文描述： | 4分（為512k】8）閃存 |
| 文件頁數(shù)： | 25/31頁 |
| 文件大小： | 249K |
| 代理商： | LH28F004SU-NC |
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4M (512K × 8) Flash Memory
LH28F004SU-LC
25
AC Characteristics for WE
- Controlled Command Write Operations
1
V
CC
= 3.3 V ± 0.3 V, T
A
= 0°C to +70°C
NOTES:
1. Read timing during write and erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, but not 100% tested.
4. Write/Erase durations are measured to valid Status Register (CSR) Data.
5. Byte write operations are typically performed with 1 Programming Pulse.
6. Address and Data are latched on the rising edge of WE
for all Command Write operations.
SYMBOL
PARAMETER
TYP.
MIN.
MAX.
UNITS
NOTE
t
AVAV
Write Cycle Time
120
ns
t
VPWH
V
PP
Set up to WE Going High
100
ns
3
t
PHEL
RP
Setup to CE
Going Low
480
ns
t
ELWL
CE
Setup to WE Going Low
10
ns
t
AVWH
Address Setup to WE Going High
110
ns
2, 6
t
DVWH
Data Setup to WE Going High
110
ns
2, 6
t
WLWH
WE Pulse Width
110
ns
t
WHDX
Data Hold from WE High
5
ns
2
t
WHAX
Address Hold from WE High
5
ns
2
t
WHEH
CE
Hold from WE High
5
ns
t
WHWL
WE Pulse Width High
60
ns
t
GHWL
Read Recovery before Write
0
ns
t
WHRL
WE High to RY
/BY
Going Low
100
ns
t
RHPL
RP
Hold from Valid Status Register
Data and RY
/BY
High
0
ns
3
t
PHWL
RP
High Recovery to WE Going Low
1
μs
t
WHGL
Write Recovery before Read
95
ns
t
QVVL
V
PP
Hold from Valid Status Register
Data and RY
/BY
High
0
μs
t
WHQV1
t
WHQV2
Duration of Byte Write Operation
20
8
μs
4, 5
Duration of Block Erase Operation
0.3
s
4
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相關(guān)代理商/技術(shù)參數(shù) |
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| LH28F004SUT-LC12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| LH28F004SUT-LC15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| LH28F004SUT-NC80 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8) Flash Memory |
| LH28F004SUT-Z1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| LH28F004SU-Z1 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8) Flash Memory |
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