參數(shù)資料
型號(hào): LH28F004SCT-L85
廠商: Sharp Corporation
英文描述: 4M Flash File Memory
中文描述: 4分Flash文件存儲(chǔ)器
文件頁(yè)數(shù): 6/31頁(yè)
文件大?。?/td> 249K
代理商: LH28F004SCT-L85
LH28F004SU-LC
4M (512K × 8) Flash Memory
6
BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS
Bus Operations
MODE
RP
CE
OE
WE
A
0
DQ
0-7
RY
/BY
NOTE
Read
V
IH
V
IL
V
IL
V
IH
X
D
OUT
X
1, 2, 7
Output Disable
V
IH
V
IL
V
IH
V
IH
X
High-Z
X
1, 6, 7
Standby
V
IH
V
IH
X
X
X
High-Z
X
1, 6, 7
Deep Power-Down
V
IL
X
X
X
X
High-Z
V
OH
1, 3
Manufacturer ID
V
IH
V
IL
V
IL
V
IH
V
IH
B0H
V
OH
4
Device ID
V
IH
V
IL
V
IL
V
IH
V
IH
ID
V
OH
4
Write
V
IH
V
IL
V
IH
V
IL
V
IL
D
IN
X
1, 5, 6
NOTES:
1. X can be V
IH
or V
IL
for address or control pins except for RY
/BY
, which is either V
OL
or V
OH
.
2. RY
/BY
output is open drain. When the WSM is ready, Erase is suspended or the device is in deep
power-down mode, RY
/BY
will be at V
OH
if it is tied to V
CC
through a resistor. When the RY
/BY
at V
OL
is independent of OE
while a WSM operation is in progress.
3. RP
at GND ± 0.2 V ensures the lowest deep power-down current.
4. A
0
at V
IL
provide manufacturer ID codes. A
0
at V
IH
provide device ID codes. Device ID code = 23H.
All other addresses are set to zero.
5. Commands for different Erase operations, Data Write Operations, and Lock-Block operations can only
be successfully completed when V
PP
= V
PPH
.
6. While the WSM is running, RY
/BY
in Level-Mode (default) stays at V
OL
until all operations are complete.
RY
/BY
goes to V
OH
when the WSM is not busy or in erase suspend mode.
7. RY
/BY
may be at V
OL
while the WSM is busy performing various operations. For example, a status register
read during a write operation.
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