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參數(shù)資料
| 型號： | LGR971 |
| 廠商： | SIEMENS AG |
| 英文描述： | CHIPLED |
| 中文描述： | 采用的ChipLED |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 52K |
| 代理商： | LGR971 |
Semiconductor Group
3
1998-08-28
LG R971
Kennwerte
(
T
A
= 25 °C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
λ
peak
Werte
Values
Einheit
Unit
Wellenlnge des emittierten Lichtes
Wavelength at peak emission
I
F
= 20 mA
Dominantwellenlnge
Dominant wavelength
I
F
= 20 mA
Spektrale Bandbreite
Spectral bandwidth
I
F
= 20 mA
Abstrahlwinkel bei 50 %
I
v
(Vollwinkel)
Viewing angle at 50 %
I
v
Durchlaspannung
Forward voltage
I
F
= 20 mA
Sperrstrom
Reverse current
V
R
= 5 V
Temperaturkoeffizient von
λ
dom
(
I
F
= 20 mA)
Temperature coefficient of
λ
dom
(
I
F
= 20 mA)
Temperaturkoeffizient von
λ
peak
,
I
F
= 20 mA
Temperature coefficient of
λ
peak
,
I
F
= 20 mA
Temperaturkoeffizient von
λ
(
I
F
= 20 mA)
Temperature coefficient of
λ
(
I
F
= 20 mA)
Temperaturkoeffizient von
V
F
, I
F
= 20 mA (typ.)
Temperature coefficient of
V
F
, I
F
= 20 mA (typ.)
Temperaturkoeffizient von
I
V
, I
F
= 20 mA
Temperature coefficient of
I
V
, I
F
= 20 mA (typ.)
(typ.)
(typ.)
565
nm
(typ.)
(typ.)
λ
dom
570
nm
(typ.)
(typ.)
λ
26
nm
2
160
Grad
deg.
(typ.)
(max.)
V
F
V
F
2.3
2.6
V
V
(typ.)
(max.)
I
R
I
R
0.01
10
μ
A
μ
A
TC
λ
0.06
nm/K
(typ.)
(typ.)
TC
λ
0.10
nm/K
TC
λ
0.03
nm/K
TC
V
– 1.3
mV/K
(typ.)
TC
Iv
– 0.3
%/K
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LGR971-KO | CHIPLED |
| LGS250-DO | LIGHT EMITTING DIODES |
| LGS259 | Light Emltting Diodes |
| LGS259-BO | Light Emltting Diodes |
| LGS260 | SOT-23 LED, Diffused |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LGR971-KN-1-0-20-R18 | 制造商:OSRAM 功能描述:OOSLG R971-KN-1-0-20-R18 Q62702P5179_CHI |
| LGR971-KO | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:CHIPLED |
| LGR971-L-1-0-20 | 制造商:OSRAM 功能描述: |
| LGR971-LM | 制造商:OSRAM 功能描述: |
| LGR971-Z | 制造商:OSRAM 功能描述:LED SMD GREEN |
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