參數(shù)資料
型號: LFECP20E-3F256I
廠商: Lattice Semiconductor Corporation
英文描述: LatticeECP/EC Family Data Sheet
中文描述: LatticeECP / EC的系列數(shù)據(jù)手冊
文件頁數(shù): 29/117頁
文件大?。?/td> 557K
代理商: LFECP20E-3F256I
2-26
Architecture
Lattice Semiconductor
LatticeECP/EC Family Data Sheet
Figure 2-30. Tristate Register Block
Control Logic Block
The control logic block allows the selection and modi
fi
cation of control signals for use in the PIO block. A clock is
selected from one of the clock signals provided from the general purpose routing and a DQS signal provided from
the programmable DQS pin. The clock can optionally be inverted.
The clock enable and local reset signals are selected from the routing and optionally inverted. The global tristate
signal is passed through this block.
DDR Memory Support
Implementing high performance DDR memory interfaces requires dedicated DDR register structures in the input
(for read operations) and in the output (for write operations). As indicated in the PIO Logic section, the EC devices
provide this capability. In addition to these registers, the EC devices contain two elements to simplify the design of
input structures for read operations: the DQS delay block and polarity control logic.
DLL Calibrated DQS Delay Block
Source Synchronous interfaces generally require the input clock to be adjusted in order to correctly capture data at
the input register. For most interfaces a PLL is used for this adjustment, however in DDR memories the clock
(referred to as DQS) is not free running so this approach cannot be used. The DQS Delay block provides the
required clock alignment for DDR memory interfaces.
The DQS signal (selected PIOs only) feeds from the PAD through a DQS delay element to a dedicated DQS rout-
ing resource. The DQS signal also feeds polarity control logic which controls the polarity of the clock to the sync
registers in the input register blocks. Figures 2-31 and 2-32 show how the DQS transition signals are routed to the
PIOs.
The temperature, voltage and process variations of the DQS delay block are compensated by a set of calibration
(6-bit bus) signals from two DLLs on opposite sides of the device. Each DLL compensates DQS Delays in its half of
the device as shown in Figure 2-32. The DLL loop is compensated for temperature, voltage and process variations
by the system clock and feedback loop.
D
LE*
Q
D
D-Type
/LATCH
Q
ONEG1
CLK1
Programmed
Control
TO
Latch
*Latch is transparent when input is low.
OPOS1
OUTDDN
0
1
0
1
From
Routing
To sysIO
Buffer
TD
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LFECP20E-3F484C 功能描述:FPGA - 現(xiàn)場可編程門陣列 19.7 LUT 360 I/O RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 柵極數(shù)量: 邏輯塊數(shù)量:943 內(nèi)嵌式塊RAM - EBR:1956 kbit 輸入/輸出端數(shù)量:128 最大工作頻率:800 MHz 工作電源電壓:1.1 V 最大工作溫度:+ 70 C 安裝風格:SMD/SMT 封裝 / 箱體:FBGA-256
LFECP20E-3F484I 功能描述:FPGA - 現(xiàn)場可編程門陣列 19.7 LUT 360 I/O RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 柵極數(shù)量: 邏輯塊數(shù)量:943 內(nèi)嵌式塊RAM - EBR:1956 kbit 輸入/輸出端數(shù)量:128 最大工作頻率:800 MHz 工作電源電壓:1.1 V 最大工作溫度:+ 70 C 安裝風格:SMD/SMT 封裝 / 箱體:FBGA-256
LFECP20E-3F672C 功能描述:FPGA - 現(xiàn)場可編程門陣列 19.7 LUT 496 I/O RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 柵極數(shù)量: 邏輯塊數(shù)量:943 內(nèi)嵌式塊RAM - EBR:1956 kbit 輸入/輸出端數(shù)量:128 最大工作頻率:800 MHz 工作電源電壓:1.1 V 最大工作溫度:+ 70 C 安裝風格:SMD/SMT 封裝 / 箱體:FBGA-256
LFECP20E-3F672I 功能描述:FPGA - 現(xiàn)場可編程門陣列 19.7 LUT 496 I/O RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 柵極數(shù)量: 邏輯塊數(shù)量:943 內(nèi)嵌式塊RAM - EBR:1956 kbit 輸入/輸出端數(shù)量:128 最大工作頻率:800 MHz 工作電源電壓:1.1 V 最大工作溫度:+ 70 C 安裝風格:SMD/SMT 封裝 / 箱體:FBGA-256
LFECP20E-3F900C 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:LatticeECP/EC Family Data Sheet