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參數(shù)資料
| 型號(hào)： | LEF20003MC-6 |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 數(shù)據(jù)傳輸濾波器 |
| 英文描述： | 6 FUNCTIONS, 5 V, 0.001 A, DATA LINE FILTER |
| 封裝： | ROHS COMPLIANT, SLP3016P12, 12 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 202K |
| 代理商： | LEF20003MC-6 |
LEF20003MC-6
ESD/EMI PROTECTION DEVICE
STAND-OFF VOLTAGE - 5.0 Volts
GENERAL DESCRIPTION
The LEF20003MC-6 is a low pass filter array with integrated
TVS diodes. It is designed to suppress unwanted EMI/RFI
signals and provide electrostatic discharge (ESD) protection
in portable electronic equipment. This state-of-the-art device
utilizes solid-state silicon-avalanche technology for superior
clamping performance and DC electrical characteristics.
They have been optimized for protection of color LCD
panels in cellular phones and other portable electronics.
FEATURES
Bidirectional EMI/RFI filter with integrated TVS for ESD
protection
Filter performance : 30dB minimum attenuation 800MHz to
2.7GHz
Protection and filtering for six lines
IEC 61000-4-2, level 4 ( ESD ), > ±15KV ( air ) ; > ±8KV
( contact ).
APPLICATION
Color LCD Protection
Cell Phone CCD Camera Lines
Clamshell Cell Phones
MECHANICAL DATA
Case Material: "Green" molding compound UL flammability
classification 94V-0 (No Br.Sb, Cl)
Terminals: Lead Free Plating (Matte Tin Finish)
Component in accordance to RoHs 2002/95/E
SLP3016P12
DIM.
MIN.
MAX.
A
0.50
0.65
A1
0.00
0.05
A2
(0.17)
b
0.20
0.30
D
2.90
3.10
D1
2.10
2.30
E
1.50
1.70
E1
0.25
0.50
e
0.50 BSC
L
0.28
0.38
All Dimensions in millimeter
Marking & Orientation
T
3
M
C
Pin Assignment (Top side view)
Device Schematic (6X)
MAXIMUM RATINGS (Tj=25oC, unless otherwise specified)
Rating
Symbol
Value
Unit
ESD per IEC 61000-4-2 (Air)
VESD
+/- 17
kV
ESD per IEC 61000-4-2 (Contact)
VESD
+/- 12
kV
Operating Junction Temperature Range
TJ
-45 to + 80
℃
Storage Temperature Range
Tstg
-55 to + 150
℃
Soldering Temperature, t max = 10s
TL
260
℃
ELECTRICAL CHARACTERISTICS (Tj= 25℃ unless otherwise noticed)
Parameter
Symbol
Condition
MIn
Typ
Max
Unit
Reverse standoff voltage
VRWM
---
5.0
V
Breakdown voltage
VBR
IR = 1 mA
6.0
---
10
V
Reverse leakage current
IRM
VDRM = 3V
---
----
0.5
uA
Total Series Resistance
R
Each Line
170
200
230
Ohms
Junction capacitance
CJ
VR = 2.5V , f = 1MHz, Input to Gnd
20
24
30
pF
Rev. 1, Oct-2010, KSIR17
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