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| 型號(hào)： | LE79R251JC |
| 英文描述： | Telecommunication IC |
| 中文描述： | 通信集成電路 |
| 文件頁數(shù)： | 9/22頁 |
| 文件大?。?/td> | 533K |
| 代理商： | LE79R251JC |
P R E L I M I N A R Y
Le79R251 ISLIC Data Sheet
9
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Stresses greater than those listed under Absolute Maximum Ratings can cause permanent device failure. Functionality at or
above these limits is not implied. Exposure to absolute maximum ratings for extended periods can affect device reliability.
Note:
1.
Thermal-limiting circuitry on chip will shut down the circuit at a junction temperature of about 160° C. Operation above 145° C junction
temperature may degrade device reliability.
2.
Rise time of VBH (dv/dt) must be limited to less than 27 V/μs.
Thermal Resistance
The junction to air thermal resistance of the Le79R251 device in a 32-pin, PLCC package is 43°C/W. The typical junction to case
thermal resistance is 14°C/W. Measured under free air convection conditions and without external heat-sinking.
Electrical Operating Ranges
Legerity guarantees the performance of this device over commercial (0°C to 70°C) and industrial (–40°C to 85°C) temperature
ranges by conducting electrical characterization over each range, and by conducting a production test with single insertion
coupled to periodic sampling. These characterization and test procedures comply with section 4.6.2 of Bellcore TR-TSY-000357
Component Reliability Assurance Requirements for Telecommunications Equipment.
Environmental Ranges
Storage Temperature
Ambient temperature, under bias
V
CC
with respect to GND
V
BH
, V
BL
with respect to GND (see Note 2)
V
BP
with respect to GND
V
BP
with respect to VBH
BGND with respect to GND
Voltage on R1 relay outputs
AD or BD to BGND:
Continuous
10 ms (F = 0.1 Hz)
1 μs (F = 0.1 Hz)
250 ns (F = 0.1 Hz)
Current into SA or SB:
10 μs rise to Ipeak;
1000 μs fall to 0.5 Ipeak;
2000 μs fall to I =0
Current into SA or SB:
2 μs rise to Ipeak;
10 μs fall to 0.5 Ipeak;
20 μs fall to I = 0
SA SB continuous
Current through AD or BD
P1, P2, P3, LD to GND
ESD Immunity (Human Body Model)
Charged device model
Maximum power dissipation, (See Note 1)
–55 to +150° C
–40 to +85° C
–0.4 to +7 V
+0.4 to –85 V
–0.4 to +85 V
150 V
–3 to +3V
+7 V
V
BH
– 1 to VBP + 1
V
BH
– 5 to VBP + 5
V
BH
– 10 to VBP + 10
V
BH
– 15 to VBP + 15
I
PEAK
= ±5 mA
I
PEAK
= ±12.5 mA
5 mA
± 150 mA
–0.4 to VCC + 0.4 V
1000 V min
900 V
T
A
= 70°C
T
A
= 85°C
1.67 W
1.33 W
Ambient Temperature
0 to 70°C Commercial
–40 to +85 °C extended temperature
Ambient Relative Humidity
5 to 95%
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