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參數(shù)資料
| 型號(hào)： | LE28FV4001T |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | 4MEG (52488 x 8 Bits) Flash Memory |
| 中文描述： | 4MEG（52488 × 8位）閃存 |
| 文件頁(yè)數(shù)： | 7/14頁(yè) |
| 文件大?。?/td> | 230K |
| 代理商： | LE28FV4001T |
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Specifications
Absolute Maximum Ratings
at Ta = 25
°
C
Note: 1. The device may be destroyed by the application of stresses in excess of the absolute maximum ratings.
2. –1.0 V to V
DD
+ 1.0 V for pulses less than 20 ns
3. –1.0 V to +14 V for pulses less than 20 ns
4. Ta = 25 °C
DC Recommended Operating Ranges
at Ta = 0 to +70°C
DC Electrical Characteristics
at Ta = 0 to +70°C, V
DD
= 3.3 V ± 0.3 V
Input/output Pin Capacitances
at Ta = 25°C, V
DD
= 3.3 V ± 0.3 V, f = 1 MHz
Note: These items are only tested for random samples, i.e. they are not tested for all devices.
Power on Timing
No. 5468-7/14
LE28FV4001M, T, R-20/25
Parameter
Symbol
Ratings
Unit
Note
Supply voltage
V
DD
V
IN
V
DQ
V
A9
Pd max
–0.5 to +6.0
V
1
Input pin voltage
–0.5 to V
DD
+ 0.5
–0.5 to V
DD
+ 0.5
–0.5 to +14.0
V
1, 2
DQ pin voltage
V
1, 2
A9 pin voltage
V
1, 3
Allowable power dissipation
600
mW
1, 4
Operating temperature
Topr
0 to +70
°C
1
Storage temperature
Tstg
–65 to +150
°C
1
Parameter
Symbol
min
typ
max
Unit
Supply voltage
V
DD
V
IL
V
IH
3.0
3.3
3.6
V
Input low-level voltage
0.6
V
Input high-level voltage
2.0
V
Parameter
Symbol
Conditions
max
Unit
Input/output capacitance
C
DQ
C
IN
V
DQ
= 0 V
V
IN
= 0 V
12
pF
Input capacitance
6
pF
Parameter
Symbol
Conditions
max
Unit
Time from power on until first read operation
t
PU-READ
t
PU-WRITE
10
ms
Time from power on until first write operation
10
ms
Parameter
Symbol
Conditions
min
typ
max
Unit
CE = OE = V
IL
, WE = V
IH
, all DQ pins open,
address inputs = V
IH
or V
IL
, operating frequency =
1/t
RC
(minimum), V
DD
= V
DD
max
CE = WE = V
IL
, OE = V
IH
, V
DD
= V
DD
max
CE = V
IH
, V
DD
= V
DD
max
CE = V
DD
– 0.3 V,
V
DD
= V
DD
max
V
IN
= V
SS
to V
DD
, V
DD
= V
DD
max
V
IN
= V
SS
to V
DD
, V
DD
= V
DD
max
I
OL
= 100 μA, V
DD
= V
DD
min
I
OH
= –100 μA, V
DD
= V
DD
min
Current drain during read
I
DDR
10
mA
Current drain during write
I
DDW
I
SB1
25
mA
TTL standby current
1
mA
CMOS standby current
I
SB2
20
μA
Input leakage current
I
LI
I
LO
V
OL
V
OH
10
μA
Output leakage current
10
μA
Output low-level voltage
0.4
V
Output high-level voltage
2.4
V
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