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參數(shù)資料
| 型號(hào)： | LE28F4001C |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | 4M-Bit (512k 】 8) Flash EEPROM |
| 中文描述： | 4分位（為512k】8）閃存EEPROM |
| 文件頁數(shù)： | 3/15頁 |
| 文件大小： | 168K |
| 代理商： | LE28F4001C |
LE28F4001CTS-12
4M-Bit
Flash
EEPROM
Preliminary
Specifications
SANYO
Electric
Co.,
Ltd.
3/14
Table 1: Pin Description
Symbol
A18-A0
DQ7-DQ0
Pin
Name
Functions
Address Inputs
Data Input/Output
To provide memory address. Address are internally latched during write cycle.
To output data during read cycle and receive input data during write cycles. Data is internally
latched during a write cycle. The outputs are in tri-state when
OE
or
CE
is high.
To activate the device when
CE
is low. Deselects and puts the device to standby when
CE
is
high.
To activate the data output buffers.
OE
is active low.
To activate the write operation.
WE
is active low.
To provide 5V
±
10% supply
.
CE
Chip Enable
OE
WE
V
CC
V
SS
Output Enable
Write Enable
Power Supply
Ground
Table
2:
Operation
Modes
Selection
Mode
CE
OE
WE
DQ
Address
Read
Write
Standby
Write Inhibit
V
IL
V
IL
V
IH
X
X
V
IL
V
IL
V
IH
X
V
IL
X
V
IL
V
IH
V
IL
X
X
V
IH
V
IH
D
OUT
D
IN
High-Z
High-Z / D
OUT
High-Z / D
OUT
Manufacturer Code (BF)
Device Code (04)
A
IN
A
IN
X
X
X
A18-A1=V
IL
, A9=12V, A0=V
IL
A18-A1=V
IL
, A9=12V, A0=V
IH
Product ID
Table 3: Command Summary
Command
Required
Cycle
2
2
1
3
7
7
Setup
Command
Cycle
Operation
Address
Write
Write
Write
Write
Execute
Command
Cycle
Operation
Address
Write
Write
SDP
Data
20H
10H
FFH
90H
Data
D0H
PD
Sector_Erase
Byte_Program
Reset
Read_ID
Software_Data_Unprotect (6)
Software_Data_Protect (6)
X
X
X
X
SA
PA
N
N
Y
Y
Read
(7)
(7)
Definitions for Table 3:
1.
Type definitions : X=high or low
2.
Address definitions : SA=Sector Address=A18-A8 ; sector size=256byte ; A7-A0=X for this command
3.
Address definitions : PA=Program Address=A18-A0
4.
Data definition : PD=Program Data, H=number in hex.
5.
SDP=Software Data Protect mode using 7-Read-Cycle-Sequence.
Y=the operation can be executed with software data protect enabled. N=the operation cannot be executed with software data protect enabled.
6.
Refer to Figure 11 and 12 for the 7-Read-Cycle-Sequence Software Data Protection.
7.
Address 0000H retrieves the manufacturer code of BF(Hex), address 0001H retrieves the device code of 04(Hex).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LE28F4001CTS | 4M-Bit (512k 】 8) Flash EEPROM |
| LE28F4001CTS-12 | 4M-Bit (512k 】 8) Flash EEPROM |
| LE28F4001M | 4 MEG (524288 words x 8 bits) Flash Memory |
| LE28F4001M-15 | |
| LE28F4001T-15 | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LE28F4001CTS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:4M-Bit (512k 】 8) Flash EEPROM |
| LE28F4001CTS-12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:4M-Bit (512k 】 8) Flash EEPROM |
| LE28F4001CTS-12M01-E | 制造商:ON Semiconductor 功能描述:P-FLASH MEMORY(8M) - Trays |
| LE28F4001CTS12-MPB-E | 制造商:ON Semiconductor 功能描述:P-FLASH MEMORY(8M) - Trays |
| LE28F4001M | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:4 MEG (524288 words x 8 bits) Flash Memory |
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