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參數(shù)資料
| 型號： | LE28DW8102T-90 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 元件分類： | EEPROM |
| 英文描述： | EEPROM |
| 中文描述： | EEPROM的 |
| 文件頁數(shù)： | 19/19頁 |
| 文件大?。?/td> | 338K |
| 代理商： | LE28DW8102T-90 |
8 Megabit FlashBank Memory
LE28DW8102T
19
SANYO Electric Co.,Ltd. Semiconductor Company 1-1-1 Sakata Oizumi Gunma Japan
R.1.01(2/15/2000) No.xxxx-19/19
Figure 16: End of Erase or Program Wait Options Flowchart
Internal Timer
Erase or Program
Operation Initiated
16141\168T\ F16_E
Wait for TBP, TSE, TLE,
TBE
Erase or Program
Completed
Toggle Bit
Data# Polling
Read a word from a bank,
block, sector, or word
selected
Read the same
word again
Is DQ6 the same
No
No
Yes
Read DQ7 of the last
address set (or any address
within selected bank,
block, sector for erase)
Is DQ7 same
as bit loaded
Erase or Program
Operation Initiated
Erase or Program
Operation Initiated
Erase or Program
Completed
Erase or Program
Completed
Yes
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| LE28F1101T-70 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:1M(65536words】16bits) Flash EEPROM |
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