參數(shù)資料
型號(hào): LE25FV051T
廠商: Sanyo Electric Co.,Ltd.
元件分類: EEPROM
英文描述: 512k (64k word x 8bits) Serial flash EEPROM
中文描述: 為512k(64k的字× 8位)串行閃存EEPROM
文件頁(yè)數(shù): 4/11頁(yè)
文件大?。?/td> 152K
代理商: LE25FV051T
LE25FV051T
3.3V-only 512k-Bit Serial Flash EEPROM
Preliminary Specifications
SANYO Electric Co., Ltd.
4/10
Absolute Maximum Stress Ratings
Storage Temperature........................................................-55 °C ~ 150 °C
Supply Voltage..................................................................-0.5 V ~ 4.6 V
D.C. Voltage on Any Pin to Grand Potential .....................-0.5 V ~ Vcc + 0.5 V
Permanent device damage may occur if ABSOLTE MAXIMUM RATINGS are exceeded.
Operating Range
Ambient Temperature .......................................................0 °C ~ 70 °C
Vcc....................................................................................3.0 V ~ 3.6 V
DC Operating Characteristics
Symbol
Parameter
Limit
unit
Test Condition
Min.
Max.
ICCR
Power Supply Current
(Read)
10
mA
CS
= VIL SO,
WP
open
SI = VIL / VIH, f = 10MHz, VCC = VCC max.
ICCW
Power Supply Current
(Write)
45
mA
VCC = VCC max.
ISB1
Standby Vcc Current
(TTL input)
3
mA
CS
= VIH SO,
WP
,
RESET
open
VCC = VCC max.
ISB2
Standby Vcc Current
(CMOS input)
20
μA
CS
= VCC–0.3V SO,
WP
,
RESET
open
VCC = VCC max.
ILI
Input Leakage Current
10
μA
VIN = VSS ~ VCC, VCC = VCC max.
ILO
Output Leakage Current
10
μA
VIN = VSS ~ VCC, VCC = VCC max.
VIL
Input Low Voltage
–0.3
0.4
V
VCC = VCC max.
VIH
Input High Voltage
2.4
Vcc+0.3
V
VCC = VCC min.
VOL
Output Low Voltage
0.2
V
IOL = 100 μA, VCC = VCC min.
VOH
Output High Voltage
Vcc-0.2
V
IOH = –100 μA, VCC = VCC min.
Power-up Timing
Symbol
Parameter
Minimum
10
10
1
Units
ms
ms
μs
tPU_READ
tPU_WRITE
tPU_RST
Power-up to Read Operation(without using
RESET
)
Power-up to Write Operation(without using
RESET
)
From
RESET
goes High to Command Entry
Capacitance (Ta = 25 °C, f = 1 MHz)
Symbol
Description
Maximum
12
6
Unit
pF
pF
Test Condition
VDQ = 0V
VIN = 0V
CDQ
CIN
Note: These parameters are periodically sampled and are not 100% tested.
DQ Pin Capacitance
Input Capacitance
相關(guān)PDF資料
PDF描述
LE28C1001T-12 5015 RR 26#16 PIN RECP
LE28C1001T-90 1MEG (131072 words x 8 bits) Flash Memory
LE28C1001T 918048463
LE28C1001T-15 5015 RR 2#12 2#16 PIN RECP
LE28CV1001T-12 5015 RR 26#16 SKT RECP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LE25FV101T 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:1M (128k words 】 8bits) Serial Flash EEPROM
LE25FV411GA-AE 制造商:ON Semiconductor 功能描述:S-FLASH MEMORY(4M) - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / S-FLASH MEMORY(4M)
LE25FW056CS-A-TRM-H 功能描述:電可擦除可編程只讀存儲(chǔ)器 RoHS:否 制造商:ON Semiconductor 存儲(chǔ)容量: 組織: 數(shù)據(jù)保留: 最大時(shí)鐘頻率: 最大工作電流: 工作電源電壓: 最大工作溫度: 安裝風(fēng)格: 封裝 / 箱體:
LE25FW056CS-FH 制造商:ON Semiconductor 功能描述:S-FLASH MEMORY(512K) - Tape and Reel
LE25FW056CS-TRM-E 制造商:ON Semiconductor 功能描述:WLP SPI EEPROM(512K) - Tape and Reel