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參數(shù)資料
| 型號(hào)： | LDTBFW30T |
| 英文描述： | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | LID |
| 中文描述： | 晶體管|晶體管|叩| 10V的五（巴西）總裁| 50mA的一（c）|蓋 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 65K |
| 代理商： | LDTBFW30T |
Micro-LID Transistors
LDTBFR90 and LDTBFR90T
______________________________________________________________________________________
Outline / Schematic:
Dimensions / Marking:
Length
Width
Height
.075
′′
+ .003
′′
.040
′′
+ .003
′′
.035
′′
+ .003
′′
Post 1 (Emitter)
Post 2 (Base)
Post 3,4 (Collector)
.015
′′
x .010
′′
typ
.015
′′
x .010
′′
typ
.015
′′
x .012
′′
typ
Marking on back of package : Yellow Diagonal over Emitter and Red Dot in Center
(post down configuration)
Standard In-Process Screening Requirements:
Semiconductor die and Micro-LID package visual inspection
Wire pull test
24 hour stabilization bake at 150
°
C
10 temperature cycles from –55
°
C to 125
°
C
100% electrical test of dc characteristics at 25
°
C
________________________________________________________________
Final visual inspection
2/3 December 1997
.075
.040
4
3
2
1
.035
SUBSTRATE / CIRCUIT BOARD
1
2
3, 4
TOP VIEW
END VIEW
SIDE VIEW
www.microlid.com sales@microlid.com
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