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參數(shù)資料
| 型號： | LDTBFW16AT |
| 英文描述： | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 150MA I(C) | LID |
| 中文描述： | 晶體管|晶體管|叩| 25V的五（巴西）總裁| 150毫安一（c）|蓋 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 65K |
| 代理商： | LDTBFW16AT |
Micro-LID Transistors
LDTBFR90 and LDTBFR90T
Description:
The LDTBFR90 (untinned) and LDTBFR90T (tinned) are NPN silicon 5 GHz
wideband transistors in very small, rugged, surface mount, 4-post ceramic
packages (Micro International manufactured package p/n 4-075-1). The
LDTBFR90 and LDTBFR90T meet the general specifications of the BFR90
transistor. The 4-075-1 Micro-LID package is a 4-post, leadless ceramic carrier
which can be provided with gold metallized or pre-tinned lands, and is approved for
military, medical implant, sensor, and high reliability applications. The LDTBFR90
and LDTBFR90T can be provided with special feature options such as additional
temperature cycling, screening, and matching Hfe selection.
Maximum Ratings:
Parameter
Symbol
Rating
Collector-Base Voltage
Vcbo
20 V
Collector-Emitter Voltage
Vceo
15 V
Emitter-Base Voltage
Vebo
2 V
Collector Current
Ic
25 mA
Total Dissipation
Pt
350 mW
Operating Junction Temperature
Tj
150
°
C
Storage Temperature
Tstg
-65
°
C to 150
°
C
Operating Temperature
Toper
-55
°
C to 125
°
C
1/3 December 1997
www.microlid.com sales@microlid.com
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| LDTBFW30 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | LID |
| LDTBFW30T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | LID |
| LDTBFY90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 25MA I(C) | LID |
| LDTBFY90T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 25MA I(C) | LID |
| LDTC114EET1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Digital transistors (built-in resistors) |
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