參數(shù)資料
型號(hào): LDT4209
英文描述: TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 50MA I(C) | LID
中文描述: 晶體管|晶體管|進(jìn)步黨| 12V的五(巴西)總裁| 50mA的一(c)|蓋
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 65K
代理商: LDT4209
Micro-LID Transistors
LDT4209 and LDT4209T
Description:
The LDT4209 (untinned) and LDT4209T (tinned) are PNP silicon transistors in
very small, rugged, surface mount, 4-post ceramic packages (Micro International
manufactured package p/n 4-075-1). The LDT4209 and LDT4209T meet the
general specifications of the 2N4209 transistor. The 4-075-1 Micro-LID package
is a 4-post, leadless ceramic carrier which can be provided with gold metallized
or pre-tinned lands, and is approved for military, medical implant, sensor, and
high reliability applications. The LDT4209 and LDT4209T can be provided with
special feature options such as additional temperature cycling and screening.
Maximum Ratings:
Parameter
Symbol
Rating
Collector-Base Voltage
Vcbo
15 V
Collector-Emitter Voltage
Vceo
12 V
Emitter-Base Voltage
Vebo
4.5 V
Collector Current
Ic
50 mA
Total Dissipation
Pt
350 mW
Operating Junction Temperature
Tj
150
°
C
Storage Temperature
Tstg
-65
°
C to 150
°
C
Operating Temperature
Toper
-55
°
C to 125
°
C
1/3 January 1997
www.microlid.com sales@microlid.com
相關(guān)PDF資料
PDF描述
LDT4209T TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 50MA I(C) | LID
LDT5087 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | LID
LDT5087T TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | LID
LDT5210 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | LID
LDT5210T TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | LID
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