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參數(shù)資料
| 型號： | LDT2907AT |
| 英文描述： | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 600MA I(C) | LID |
| 中文描述： | 晶體管|晶體管|進步黨| 60V的五（巴西）總裁| 600毫安一（c）|蓋 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 64K |
| 代理商： | LDT2907AT |
Micro-LID Transistors
LDT2907A and LDT2907AT
Description:
The LDT2907A (untinned) and LDT2907AT (tinned) are PNP silicon transistors in
very small, rugged, surface mount, 4-post ceramic packages (Micro International
manufactured package p/n 4-075-1). The LDT2907A and LDT2907AT meet the
general specifications of the 2N2907A transistor. The 4-075-1 Micro-LID package
is a 4-post, leadless ceramic carrier which can be provided with gold metallized
or pre-tinned lands, and is approved for military, medical implant, sensor, and
high reliability applications. The LDT2907A and LDT2907AT can be provided
with special feature options such as additional temperature cycling and
screening.
Maximum Ratings:
Parameter
Symbol
Rating
Collector-Base Voltage
Vcbo
60 V
Collector-Emitter Voltage
Vceo
60 V
Emitter-Base Voltage
Vebo
5 V
Collector Current
Ic
600 mA
Total Dissipation
Pt
350 mW
Operating Junction Temperature
Tj
150
°
C
Storage Temperature
Tstg
-65
°
C to 150
°
C
Operating Temperature
Toper
-55
°
C to 125
°
C
1/3 January 1997
www.microlid.com sales@microlid.com
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