參數(shù)資料
型號: LDT2484
英文描述: TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | LID
中文描述: 晶體管|晶體管|叩| 60V的五(巴西)總裁| 50mA的一(c)|蓋
文件頁數(shù): 2/4頁
文件大?。?/td> 64K
代理商: LDT2484
Micro-LID Transistors
LDT2484 and LDT2484T
Description:
The LDT2484 (untinned) and LDT2484T (tinned) are NPN silicon transistors in
very small, rugged, surface mount, 4-post ceramic packages (Micro International
manufactured package p/n 4-075-1). The LDT2484 and LDT2484T meet the
general specifications of the 2N2484 transistor. The 4-075-1 Micro-LID package
is a 4-post, leadless ceramic carrier which can be provided with gold metallized
or pre-tinned lands, and is approved for military, medical implant, sensor, and
high reliability applications. The LDT2484 and LDT2484T can be provided with
special feature options such as additional temperature cycling and screening.
Maximum Ratings:
Parameter
Symbol
Rating
Collector-Base Voltage
Vcbo
60 V
Collector-Emitter Voltage
Vceo
60 V
Emitter-Base Voltage
Vebo
6 V
Collector Current
Ic
50 mA
Total Dissipation
Pt
350 mW
Operating Junction Temperature
Tj
150
°
C
Storage Temperature
Tstg
-65
°
C to 150
°
C
Operating Temperature
Toper
-55
°
C to 125
°
C
1/3 January 1997
www.microlid.com sales@microlid.com
相關(guān)PDF資料
PDF描述
LDT2484T TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | LID
LDT2857 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | LID
LDT2857T TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | LID
LDT2907A TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 600MA I(C) | LID
LDT2907AT TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 600MA I(C) | LID
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