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參數(shù)資料
| 型號： | LDAN222T1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Common Cathode Silicon Dual Switching Diode |
| 中文描述： | 雙共陰極硅開關(guān)二極管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 146K |
| 代理商： | LDAN222T1 |
This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching
applications. This
device is
housed in the
SC–
89
package which is designed
for low
power surface mount applications, where board space is at a
premium.
Fast trr
Low CD
Available in 8 mm Tape and Reel
MAXIMUM RATINGS
(TA = 25
°
C)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
VRM
IF
IFM
IFSM(1)
80
Vdc
Peak Reverse Voltage
80
Vdc
Forward Current
100
mAdc
Peak Forward Current
300
mAdc
Peak Forward Surge Current
2.0
Adc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
PD
TJ
Tstg
150
mW
Junction Temperature
150
°
C
Storage Temperature Range
–55 to +150
°
C
1. t = 1
μ
S
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C)
Characteristic
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current
IR
VF
VR
CD
trr(2)
VR = 70 V
IF = 100 mA
IR = 100
μ
A
VR = 6.0 V, f = 1.0 MHz
—
0.1
μ
Adc
Forward Voltage
—
1.2
Vdc
Reverse Breakdown Voltage
80
—
Vdc
Diode Capacitance
—
3.5
pF
Reverse Recovery Time
IF = 5.0 mA, VR = 6.0 V, RL = 100
, Irr = 0.1 IR
—
4.0
ns
2. trr Test Circuit on following page.
LDAN222T1=N
9
Driver Marking
LDAN222T1-1/3
1
2
3
SC-89
LDAN222T1
3
CATHODE
1
ANODE
2
ANODE
Common Cathode Silicon
Dual Switching Diode
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