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參數(shù)資料
| 型號(hào)： | LD512MCRO |
| 英文描述： | Hearing Aid Amplifier |
| 中文描述： | 助聽器放大器 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 83K |
| 代理商： | LD512MCRO |
8 pin PLID
8 pin SLT (LD512)
Chip (61 x 61 mils)
Au Bump
DESCRIPTION
The GB512 and LD512 are 8 pin stand-alone input compression
amplifiers requiring minimal external parts. Each consists of a
voltage regulator for the electret microphone providing a high
power supply rejection ratio (PSRR), a compression stage
which has a 2:1 compression ratio, and an auto-biasing,
class A, voltage drive output stage.
The auto-bias output stage can drive a variety of impedances
ranging from 500
to 5 k
without adding any external
resistors to set the bias.
The GB512 and LD512 are recommended for low to medium
gain/output ITE and ITC type hearing aids.
The GB512 is tested to tighter test limits.
GB512/LD512 DATA SHEET
Low Parts
Compression Amplifier
FEATURES
44 dB typical preamplifier gain
14 dB typical output stage gain
compression function ratio 1:1 to 2:1 to
∞
:1
automatic setting of transducer current
operation down to 1.1 VDC
greater than 40 dB volume control range
STANDARD PACKAGING
Document No. 500 - 75 - 08
200 mV
REF
V
REG
7
A IN
V
REG
C
AGC
3
8
4
5
6
1
C
+
_
B
-
-
A
GND B OUT C IN
C OUT
28 dB
16 dB
V
B
CONTROL
2
BLOCK DIAGRAM
Revision Date: January 2001
GENNUM CORPORATION P.O. Box 489, Stn A, Burlington, Ontario, Canada L7R 3Y3 tel. (905) 632-2996 fax: (905) 632-5946
Japan Branch: A-302, Miyamae Village, 2-10-42, Miyamae, Suginami-ku, Tokyo 168, Japan tel. (03) 3334-7700 fax (03) 3247-8839
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LD512PLID | Hearing Aid Amplifier |
| LD512SLT | Hearing Aid Amplifier |
| LDH3603 | Optoelectronic |
| LDR3701 | Optoelectronic |
| LDR3702 | Optoelectronic |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LD512PLID | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Hearing Aid Amplifier |
| LD512SLT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Hearing Aid Amplifier |
| LD5132HS06M | 制造商:FOXCONN 功能描述:New |
| LD51W6-A | 制造商:Panduit Corp 功能描述: |
| LD-520-50SG | 制造商:ROITHNER 制造商全稱:ROITHNER 功能描述:Direct Emitting Green Laser Diode 520 nm 50 mW single Transverse Mode Structure: GaN |
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