參數(shù)資料
型號(hào)： LD0810-90
英文描述： LDMOS RF Power Transistors 90 Watts， 800-1000 MHz， 26 Volts
中文描述： LDMOS射頻功率晶體管，90瓦，800?1000兆赫，26伏特
文件頁數(shù)： 1/2頁
文件大?。?/td> 27K
代理商： LD0810-90
LDMOS RF Power Transistor 50 Watts, 800-1000 MHz, 26 Volts
LD0810-50
M/A-COM Division of AMP Incorporated North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
The preliminary specifications data sheet contains typical electrical specifications which may change prior to final introduction.
V1.00
Large Signal Device Impedance
F (MHz)
850
900
950
Features
New LDMOS Technology
Broadband Class AB Operation
Characterized for GSM TDMA Applications
Gold Metalization System for Reliability
Excellent Thermal Characteristics
-30dBc Typical Third Order IMD at 46 dBm
No Internal Matching
Outline Drawing
1, 2
Notes: (unless otherwise specified)
1. Dimensions are in (mm)
2. Tolerance: inches
±
.005” (millimeters ±0.13mm)
Electrical Specifications at +25°C
Symbol
BV
DSS
Drain-Source Breakdown
I
DSS
Drain-Source Leakage
BV
GSS
Gate-Source Breakdown
V
GS(ON)
Gate “On” Voltage
G
M
Transconductance
R
DS(ON)
On-Site Resistance
P
G
Power Gain
P
IN
Input Power
η
D
Drain Efficiency
VSWR-T
Load Mismatch Tolerance
R
TH(JC)
Thermal Resistance
LDMOS RF Power Transistor
50 Watts, 800-1000 MHz, 26V
Preliminary Specifications
Z
IF
1.6 - j 1.5
1.6 - j 1.9
1.5 - j 2.3
1
(
)
Z
OF
2.3 + j 0.3
2.4 - j 0.2
2.5 - j 0.5
2
(
)
Absolute Maximum Rating
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
Storage Temperature
Operating Temperature
Junction Temperature
1
Symbol
V
DS
V
GS
I
D
P
TOT
T
STG
T
OPR
T
j
Rating
60
20
5.0
70
-65 to +175
-40 to +80
200
Units
V
V
A
W
°
C
°
C
°
C
Parameters
Test Conditions
Units
V
mA
V
V
S
dB
W
%
—
°C/W
Min.
60
1
—
20
2.5
0.5
—
11
—
50
—
—
Max
—
2.0
—
5.0
—
0.5
—
4.0
—
TBD
TBD
I
D
= 10.0 mA
V
DS
= 25 V
I
GS
= 1 μA, V
DS
= 0.0 V
I
DS
= 300 mA, V
DS
= 10 V
I
DS
= 1000 mA, V
DS
= 10 V
I
DS
= 200 mA, V
DS
= 10 V
V
CC
= 26V, P
O
= 50 W, F=960 MHz, I
DQ
= 400 mA
V
CC
= 26V, P
O
= 50 W, F=960 MHz, I
DQ
= 400 mA
V
CC
= 26V, P
O
= 50 W, F=960 MHz, I
DQ
= 400 mA
V
CC
= 26V, P
O
= 50 W, F=900 MHz, I
DQ
= 400 mA
V
CC
= 26V, P
O
= 50 W, F=900 MHz, I
DQ
= 400 mA
.800 [20.32]
.562 [14.27]
2X .215 [5.46]
.235 [5.97]
DRAIN
2X
φ
.130 [3.30]
.230 [5.84]
SOURCE
.235 [5.97]
.350 [8.89]
GATE
.158 [4.01] + .010 [0.25]
.080 [2.03]
2X .0035 [0.09]- .0010 [0.03]
1.
Preliminary parts meet a 55V Specification. No other specifica-
tions are affected.
1. Z
- The impedance measured looking into the Gate side of the
optimally tuned test fixture.
2. Z
- The impedance measured looking into the Drain side of the
optimally tuned test fixture.
1.
Preliminary parts meet a 55V Specification. No other specifications are affected.
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