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| 型號(hào)： | LC8.5A |
| 廠(chǎng)商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 1500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR |
| 中文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-202AA |
| 封裝： | HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 586K |
| 代理商： | LC8.5A |
1500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSDALE DIVISION
LC6.5 thru LC170A
W
M
.
C
L
DESCRIPTION
APPEARANCE
This hermetically sealed Transient Voltage Suppressor (TVS) product family
includes a rectifier diode element in series and opposite direction to achieve low
capacitance performance below 100 pF (see Figure 2). The low level of TVS
capacitance may be used for protecting higher frequency applications in
inductive switching environments or electrical systems involving secondary
lightning effects per IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for
airborne avionics. With virtually instantaneous response, they also protect from
ESD and EFT per IEC61000-4-2 and IEC61000-4-4. If bipolar transient
capability is required, two of these low capacitance TVS devices may be used in
parallel in opposite directions (anti
-
parallel) for complete ac protection as shown
in Figure 6.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
FEATURES Unidirectional low-capacitance TVS series for flexible
thru-hole mounting (for bidirectional see Figure 4)
Suppresses transients up to 1500 watts @ 10/1000 μs
(see Figure 1)*
Clamps transient in less than 100 pico seconds
Working voltage (V
WM
) range 6.5 V to 170 V
Hermetic sealed DO-13 metal package
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are also
available by adding MQ, MX, MV, MSP prefixes
respectively to part numbers, e.g. MXLC6.5A, etc.
Surface mount equivalent packages also available as
SMCJLCE6.5 - SMCJLCE170A or SMCGLCE6.5 -
SMCGLCE170A in separate data sheet (consult
factory for other surface mount options)
Plastic axial-leaded equivalents available in the
LCE6.5 - LCE170A series in separate data sheet
DO-13
(DO-202AA)
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Protection for aircraft fast data rate lines per select
level waveforms in RTCA/DO-160D & ARINC 429
ESD & EFT protection per IEC 61000-4-2 and -4-4
Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1: LC6.5 to LC170A
Class 2: LC6.5 to LC150A
Class 3: LC6.5 to LC70A
Class 4: LC6.5 to LC36A
Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance:
Class 1 : LC6.5 to LC90A
Class 2: LC6.5 to LC45 A
Class 3: LC6.5 to LC22A
Class 4: LC6.5 to LC11A
Secondary lightning protection per IEC61000-4-5 with
2 Ohms source impedance:
Class 2: LC6.5 to LC20A
Class 3: LC6.5 to LC10A
Inherently radiation hard per Microsemi MicroNote 050
MECHANICAL AND PACKAGING
CASE: DO-13 (DO-202AA), welded, hermetically
sealed metal and glass
FINISH: All external metal surfaces are Tin-Lead
plated and solderable per MIL-STD-750 method 2026
POLARITY: Cathode connected to case as shown by
diode symbol (cathode positive for normal operation)
MARKING: Part number and polarity diode symbol
WEIGHT: 1.4 grams. (Approx)
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
See package dimension on last page
MAXIMUM RATINGS
1500 Watts at 10/1000
μ
s
with repetition rate of 0.01% or
less*
at lead temperature (T
L
) 25
C (see Figs. 1, 2, & 4)
Operating & Storage Temperatures: -65
o
to +175
o
C
THERMAL RESISTANCE: 50
o
C/W (Typical) junction to
lead at 0.375 inches (10 mm) from body or 110
C/W
junction to ambient when mounted on FR4 PC board
with 4 mm
copper pads (1 oz) and track width 1 mm,
length 25 mm
DC Power Dissipation
*
: 1 Watt at T
L
< +125
o
C 3/8” (10
mm) from body (see derating in Fig 3 and note below)
Solder Temperatures: 260
o
C for 10 s (maximum)
*
TVS devices are not typically used for dc power dissipation and are instead operated < V
WM
(rated standoff voltage) except for transients that briefly
drive the device into avalanche breakdown (V
BR
to V
C
region) of the TVS element. Also see Figures 3 and 4 for further protection details in rated peak
pulse power for unidirectional and bidirectional configurations respectively.
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2002
10-21-2004 REV C
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