參數(shù)資料
型號(hào): LC5512MC-45F256C
廠商: LATTICE SEMICONDUCTOR CORP
元件分類: PLD
英文描述: 3.3V, 2.5V and 1.8V In-System Programmable eXpanded Programmable Logic Device XPLD⑩ Family
中文描述: EE PLD, 5.7 ns, PBGA256
封裝: FPBGA-256
文件頁數(shù): 11/92頁
文件大?。?/td> 378K
代理商: LC5512MC-45F256C
Lattice Semiconductor
ispXPLD 5000MX Family Data Sheet
11
Pseudo Dual-Port SRAM Mode
In Pseudo Dual-Port SRAM Mode the multi-function array is con
fi
gured as a SRAM with an independent read and
write ports that access the same 16,384-bits of memory. Data widths of 1, 2, 4, 8, 16 and 32 are supported by the
MFB. Figure 10 shows the block diagram of the Pseudo Dual-Port SRAM.
Write data, write address, chip select and write enable signals are always synchronous (registered). The read data
and read address signals can be synchronous or asynchronous. Reset is asynchronous. All write signals share the
same clock, and clock enable. All read signals share the same clock and clock enable. Reset is shared by both
read and write signals. Table 6 shows the possible sources for the clock, clock enable and initialization signals for
the various registers.
Figure 10. Pseudo Dual-Port SRAM Block Diagram
Table 6. Register Clock, Clock Enable, and Reset in Pseudo Dual-Port SRAM Mode
Register
Input
Source
Write Address, Write
Data, Write Enable,
and Write Chip Select
Clock
WCLK or one of the global clocks (CLK0 - CLK3). The selected signal can
be inverted if desired.
WCEN or one of the global clocks (CLK1 - CLK2). The selected signal can
be inverted if desired.
Created by the logical OR of the global reset signal and RST. RST may have
inversion if desired.
RCLK or one of the global clocks (CLK0 - CLK3). The selected signal can be
inverted if desired.
RCEN or one of the global clocks (CLK1 - CLK2). The selected signal can
be inverted if desired.
Created by the logical OR of the global reset signal and RST. RST may have
inversion if desired.
Clock Enable
Reset
Read Data and Read
Address
Clock
Clock Enable
Reset
68 Inputs
From
Routing
16,384 bi
t
Pseudo
Dual
Port
SRAM
Array
Write Address
(WAD[0:8-13])
Write Clk Enable
(WCEN)
Write Clock
(WCLK)
Write Chip Sel
(WCS[0,1])
Read Address
(RAD[0:8-13])
Write Enable
(WE)
Reset
(RST)
Read Clk Enable
(RCEN)
Read Clock
(RCLK)
Write Data
(WD[0:0,1,3,7,15,31])
RESET
CLK0
CLK1
CLK2
Read Data
(RD[0:0-15])
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