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參數(shù)資料
| 型號： | LC4104C-T2A |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 68K |
| 代理商： | LC4104C-T2A |
Electrical Characteristics
at Ta = –20 to +75°C, V
DD
= 2.7 to 5.5 V, V
SS
= 0 V
Note: 1. V
O
is the voltage applied for an on output, V0 = V
DDH
, V2 = 18/20 (V
DDH
– V
SS
), V3 = 2/20 (V
DDH
– V
SS
), V5 = V
SS
2. LOAD = 28 kHz, CP = 10 MHz, M = 75 Hz
Alternatively: No output load and with the inputs V
IH
= V
DD
and V
IL
= V
SS
.
3. The current drain in standby mode. Note that the EIOn pins must be held at V
DD
.
Switching Characteristics
at Ta = –20 to +75°C, V
SS
= 0 V, V
DD
= 5 V ± 10%
Switching Characteristics
at Ta = –20 to +75°C, V
SS
= 0 V, V
DD
= 2.7 to 4.5 V
Timing Chart
No. 6790-4/8
LC4104C-T2A
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Input high-level current
I
IH
V
IN
= V
DD
: D0 to D7, LOAD, CP, R/L, M, DISP,
EIO1, EIO2, BS, TEST
5
μA
I
IL
1
V
IN
= V
SS
: D0 to D7, LOAD, CP, R/L, M, DISP,
EIO1, EIO2, BS
–5
Input low-level current
μA
I
IL
2
V
OH
V
OL
V
IN
= V
SS
: TEST
I
O
= –0.4 mA: EIO1, EIO2
I
O
= 0.4 mA: EIO1, EIO2
V
DDH
= 36 V
*
1
, V0 – V
O
= 0.5 V, V2 – V
O
= 0.5 V,
V
O
– V3 = 0.5 V, V
O
– V5 = 0.5 V: O1 to O160
V
DD
= 2.7 to 5.5 V
–500
Output high-level voltage
V
DD
– 0.4
V
DD
0.4
V
Output low-level voltage
V
SS
V
Output on resistance
R
OUT
1
3
k
I
DD
5.0
mA
Current drain
I
DDH
V
DD
= 2.7 to 5.5 V, V
DDH
= 32 V
*
2
,
V
DD
= 5 V ± 10%, V
DDH
= 36 V
2.0
mA
2.0
mA
I
ST
*
3
500
μA
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
EIO output delay time
td (eo)
30 pF capacitive load: CP, EIO1, EIO2
40
ns
LD/EIO output delay time
td (leo)
30 pF capacitive load: LOAD, EIO1, EIO2
70
ns
LOAD/on delay time
td (ldo)
100 pF capacitive load: LOAD, O1 to O160
3
μs
M/on delay time
td (mo)
100 pF capacitive load: M, O1 to O160
3
μs
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
EIO output delay time
td (eo)
30 pF capacitive load: CP, EIO1, EIO2
80
ns
LD/EIO output delay time
td (leo)
30 pF capacitive load: LOAD, EIO1, EIO2
130
ns
LOAD/on delay time
td (ldo)
100 pF capacitive load: LOAD, O1 to O160
3
μs
M/on delay time
td (mo)
100 pF capacitive load: M, O1 to O160
3
μs
tsu(ld)
tw(ldH)
tr(ld)
0.8VDD
tf(ld)
tw(cpH)
tr(cp)
tf(cp)
tsu(cp)
td(mo)
td(ldo)
td(leo)
td(eo)
tsu(ei)
tho(cp)
tw(cpL)
tho(ld)
LOAD
CP
D0 to D7
M
On
EIOn (output)
(Input to the
next stage)
A13677
0.2VDD
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