參數(shù)資料
型號(hào): LC33832ML-80
廠商: Sanyo Electric Co.,Ltd.
英文描述: 256 K (32768 words X 8 bits) Pseudo-SRAM
中文描述: 256度(32768字× 8位)偽SRAM
文件頁數(shù): 6/9頁
文件大?。?/td> 128K
代理商: LC33832ML-80
LC33832P, S, M, PL, SL, ML-70/80/10
No. 4430-6/9
Continued from preceding page.
Note : 5) To accomplish internal initialization, CE and OE/RFSH are fixed at V
IH
for an interval of 1 ms when V
CC
reaches the
specified voltage after power is switched on.
6) Measured at t
T
= 5 ns.
7) When measuring input signal timing, V
IH
(min) and V
IL
(max) are reference levels.
8) Measured using an equivalent of 100 pF and two standard TTL loads.
9) OE/RFSH input functions as output-enable input (OE) when CE = V
IL
, and as refresh input (RFSH) when CE = V
IH
.
10) t
CHZ
, t
OHZ
, and t
WHZ
are defined as the time until output enters the open circuit state and the output voltage level
becomes immeasurable.
11) As with ordinary static RAM, write data is incorporated at the rise of WE input or CE input, whichever is earlier, and
write data is therefore held during t
DSW
, t
DSC
, t
DHW
, or t
DHC
.
12) Because address input is incorporated at the fall of CE, the address is maintained during t
ASC
or t
AHC
.
13) Auto-refresh and self-refresh are determined by OE/RFSH pulse width when CE = V
IH
, and are defined as auto-refresh
when below t
FAP
(max), or as self-refresh when above t
FAS
(min). In order to activate CE after the completion of each
refresh, t
FCE
must be assured for auto-refresh, or t
FRS
must be assured for self-refresh.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LC33832P 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:256 K (32768 words X 8 bits) Pseudo-SRAM
LC33832P-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Pseudo-Static RAM
LC33832P-70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
LC33832P-80 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Pseudo-Static RAM
LC33832PL 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:256 K (32768 words X 8 bits) Pseudo-SRAM