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參數(shù)資料
| 型號： | LC33832M |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | 256 K (32768 words X 8 bits) Pseudo-SRAM |
| 中文描述： | 256度（32768字× 8位）偽SRAM |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 128K |
| 代理商： | LC33832M |
Ordering number : EN4430C
22897HA (OT)/52595TH (OT)/N1993JN/40893JN A8-9957, 58, 59, No. 4430-1/9
Overview
The LC33832 series is composed of pseudo static RAM
that operates on a single 5 V power supply and is
organized as 32768 words
×
8 bits. By using memory
cells each composed of a single transistor and capacitor,
together with peripheral CMOS circuitry, this series
achieves ease of use with high density, high speed, and
low power dissipation. The LC33832 series can easily
accomplish auto-refresh and self-refresh by means of
OE/RFSH input. As with asynchronous static RAM, WE
input uses a system for incorporating input data at the WE
rise, thereby facilitating interfacing with a microcomputer.
The LC33832 series features pin compatibility with 256 K
static RAM (the LC36256A series), and available
packages are the standard 28-pin DIP with widths of 600
mil or 300 mil, and the SOP with a width of 450 mil.
CE-only refresh can be accomplished by selecting address
256 (A0 to A7) within 4 ms.
Features
32768 words
×
8 bits configuration
Single 5 V ±10% power supply
All input and output (I/O) TTL compatible
Fast access times and low power dissipation
4 ms refresh using 256 refresh cycle
CE-only refresh, auto-refresh, and self-refresh
Low-power version: 100 μA self-refresh current
Package
DIP28-pin (600 mil) plastic package: LC33832P, PL
DIP28-pin (300 mil) plastic package: LC33832S, SL
SOP28-pin (450 mil) plastic package: LC33832M, ML
Package Dimensions
unit: mm
3012A-DIP28
unit: mm
3133-DIP28
SANYO: DIP28
[LC33832P, PL]
SANYO: DIP28
[LC33832S, SL]
LC33832P, S, M, PL, SL, ML-70/80/10
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
256 K (32768 words
×
8 bits) Pseudo-SRAM
CMOS LSI
Parameter
LC33832P, S, M, PL, SL, ML
-70
-80
-10
CE access time
70 ns
80 ns
100 ns
OE access time
30 ns
35 ns
40 ns
Cycle time
115 ns
130 ns
160 ns
Current drain
Operating
65 mA
60 mA
50 mA
Standby
1 mA/100 μA (L version)
CE access time/OE access time/Cycle time/Current drain
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LC33832ML-80 | 256 K (32768 words X 8 bits) Pseudo-SRAM |
| LC33832ML-70 | 256 K (32768 words X 8 bits) Pseudo-SRAM |
| LC33832ML-10 | 256 K (32768 words X 8 bits) Pseudo-SRAM |
| LC33864M-10 | 512K PSEUDO SRAM |
| LC33864M-70 | 512K PSEUDO SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LC33832M-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| LC33832M-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Pseudo-Static RAM |
| LC33832M-80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| LC33832ML | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| LC33832ML-10 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:256 K (32768 words X 8 bits) Pseudo-SRAM |
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