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參數(shù)資料
| 型號： | LBC859CLT1G |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors PNP Silicon |
| 中文描述： | 通用硅晶體管進(jìn)步黨 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 153K |
| 代理商： | LBC859CLT1G |
LESHAN RADIO COMPANY, LTD.
LBC856
I
C
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
I
B
, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@V
CE
= –5.0 V
T
J
= 25°C
V
CE
= –5.0V
T
A
= 25°C
V
CE(sat)
@ I
C
/I
B
= 10
V
θ
V
V
I
C
=
–10 mA
–100mA
–20mA
–200mA
T
J
= 25°C
θ
VB
for V
BE
–55°C to 125°C
–1.0
–1.4
–1.8
–2.2
–2.6
–3.0
–0.2
–1.0
–0.8
–0.6
–0.4
–0.2
0
2.0
1.0
0.5
0.2
–2.0
–1.6
–1.2
–0.8
–0.4
0
–0.02
–0.1–0.2
–1.0–2.0 –5.0–10–20 –50–100–200
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200
–0.5 –1.0 –2.0
–5.0
–10 –20
–50 –100 –200
–0.05 –0.1
–0.2
–0.5
–1.0 –2.0
–5.0
–10 –20
h
F
–50mA
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
I
C
, COLLECTOR CURRENT (mA)
Figure 12. Current–Gain – Bandwidth Product
C
f
T
,
C
ob
C
ib
T
J
= 25°C
V
CE
= –5.0 V
–0.1–0.2 –0.5
–1.0 –2.0
–5.0 –10 –20
–50 –100
–1.0
–10
–100
40
20
10
8.0
6.0
4.0
2.0
500
200
100
50
20
LBC856ALT1 Series
LBC856ALT1S-5/7
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