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參數(shù)資料
| 型號： | LBC859CLT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors PNP Silicon |
| 中文描述： | 通用硅晶體管進(jìn)步黨 |
| 文件頁數(shù)： | 6/7頁 |
| 文件大?。?/td> | 153K |
| 代理商： | LBC859CLT1 |
LESHAN RADIO COMPANY, LTD.
LBC856ALT1S-6/7
t, TIME (ms)
Figure 13. Thermal Response
V
CE
, COLLECTOR–EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
The safe operating area curves indicate I
C
–V
CE
limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150°C; T
C
or T
A
is variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided T
J(pk)
<
150°C. T
J(pk)
may be calcu-
lated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the sec-
ondary breakdown.
BC558
BC557
BC556
Z
θ
JC
(t) = r(t) R
θ
JC
R
θ
JC
= 83.3°C/W MAX
Z
R
JA
= 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– T
C
= P
(pk)
R
θ
JC
(t)
θ
JA
(t) = r(t) R
θ
JA
I
r
R
DUTY CYCLE, D = t
1
/t
2
t
1
t
2
P
(pk)
SINGLE PULSE
SINGLE PULSE
T
A
= 25°C
T
J
= 25°C
3 ms
1s
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
D=0.5
0.2
0.1
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
–1.0
–0.5
–10
–30 –45 –65–100
–200
–100
–50
–10
–5.0
–2.0
LBC856ALT1 Series
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