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參數(shù)資料
| 型號： | LBC859BLT1G |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors PNP Silicon |
| 中文描述： | 通用硅晶體管進(jìn)步黨 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 153K |
| 代理商： | LBC859BLT1G |
LESHAN RADIO COMPANY, LTD.
LBC857/ LBC858
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
–200
V
CE
= –10 V
T
A
= 25°C
2.0
1.5
1.0
0.7
0.5
0.3
0.2
–0.1
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
=10
V
BE(on)
@ V
CE
= –10 V
V
CE(sat)
@ I
C
/I
B
= 10
T
A
= 25°C
V
–1.0
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
0
θ
V
1.0
1.2
1.6
2.0
2.4
2.8
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
V
C
,
I
C
= –200 mA
–55°C to +125°C
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
–0.2
–1.0
–10
–100
–0.02
–0.1
–1.0
–10
–20
–2.0
–1.6
–1.2
–0.8
–0.4
0
I
C
=
–10 mA
I
C
= –100 mA
I
C
= –
20 mA
I
C
= –50 mA
h
F
,
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
I
C
, COLLECTOR CURRENT (mAdc)
Figure 6. Current–Gain – Bandwidth Product
T
A
=25°C
V
CE
=–10V
T
A
= 25°C
f
T
,
P
V
C
ob
C
ib
400
300
200
100
80
60
40
30
20
10.0
7.0
5.0
3.0
2.0
1.0
–0.4
–0.6
–1.0
–2.0
–4.0
–6.0
–10
–20
–30
–40
–0.5
–1.0
–2.0
–3.0
–5.0
–10
–20
–30
–50
LBC856ALT1 Series
LBC856ALT1S-4/7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LBC859CLT1 | General Purpose Transistors PNP Silicon |
| LBC859CLT1G | General Purpose Transistors PNP Silicon |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LBC859CLT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
| LBC859CLT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
| LBC859CLT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
| LBC85XBDW1T1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Dual General Purpose Transistors |
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