參數(shù)資料
型號: LBC858
廠商: 樂山無線電股份有限公司
英文描述: General Purpose Transistors PNP Silicon
中文描述: 通用硅晶體管進步黨
文件頁數(shù): 5/7頁
文件大?。?/td> 153K
代理商: LBC858
LESHAN RADIO COMPANY, LTD.
LBC856
I
C
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
I
B
, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@V
CE
= –5.0 V
T
J
= 25°C
V
CE
= –5.0V
T
A
= 25°C
V
CE(sat)
@ I
C
/I
B
= 10
V
θ
V
V
I
C
=
–10 mA
–100mA
–20mA
–200mA
T
J
= 25°C
θ
VB
for V
BE
–55°C to 125°C
–1.0
–1.4
–1.8
–2.2
–2.6
–3.0
–0.2
–1.0
–0.8
–0.6
–0.4
–0.2
0
2.0
1.0
0.5
0.2
–2.0
–1.6
–1.2
–0.8
–0.4
0
–0.02
–0.1–0.2
–1.0–2.0 –5.0–10–20 –50–100–200
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200
–0.5 –1.0 –2.0
–5.0
–10 –20
–50 –100 –200
–0.05 –0.1
–0.2
–0.5
–1.0 –2.0
–5.0
–10 –20
h
F
–50mA
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
I
C
, COLLECTOR CURRENT (mA)
Figure 12. Current–Gain – Bandwidth Product
C
f
T
,
C
ob
C
ib
T
J
= 25°C
V
CE
= –5.0 V
–0.1–0.2 –0.5
–1.0 –2.0
–5.0 –10 –20
–50 –100
–1.0
–10
–100
40
20
10
8.0
6.0
4.0
2.0
500
200
100
50
20
LBC856ALT1 Series
LBC856ALT1S-5/7
相關(guān)PDF資料
PDF描述
LBC858ALT1 General Purpose Transistors PNP Silicon
LBC858ALT1G General Purpose Transistors PNP Silicon
LBC858BLT1 General Purpose Transistors PNP Silicon
LBC858BLT1G General Purpose Transistors PNP Silicon
LBC858CLT1 General Purpose Transistors PNP Silicon
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LBC858ALT1 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon
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LBC858BDW1T1 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Dual General Purpose Transistors